Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 19 mOhm

Integrates a 650V enhancement-mode GaN power transistor with gate-drive and protection functions in a single package. An internal gate clamp, supported by LDO-based circuitry, regulates the gate drive voltage over a 10 - 24V input range to protect the GaN transistor from excessive gate stress while maintaining excellent switching performance. Intended for compact, high-frequency, and high-power conversion applications.