Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 700V, 132 mOhm

700V high-frequency enhancement mode GaN FETs are optimized for high-frequency operation. They combine low RDS(on) with ultra-low gate and output charges (Qg, Qgd, Qoss), along with zero reverse-recovery charge, enabling higher switching frequencies, improved power density, and increased efficiency. These devices are ideal for DC-DC converters, synchronous rectification, and motor drive aplications across computing, industrial, and telecom markets.