650V 140mΩ GaN half bridge with integrated driver, protection and current sensing

The LMG2652H is a

650V 140mΩ GaN power-FET half bridge. The LMG2652H simplifies design, reduces component count, and reduces

board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and

high-side gate-drive level shifter in a 6mm × 8mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The

low-side current-sense emulation reduces power dissipation compared to the

traditional current-sense resistor and allows the low-side thermal pad to connect to

PCB power ground.

Control the high-side GaN power FET

with either the low-side referenced gate-drive pin (INH) or the high-side referenced

gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably

transmits the INH pin signal to the high-side gate driver in challenging power

switching environments. The smart-switched GaN bootstrap FET has no diode

forward-voltage drop, avoids overcharging the high-side supply, and has zero

reverse-recovery charge.

The LMG2652H supports

converter light-load efficiency requirements and burst-mode operation with low

quiescent currents and fast start-up times. Protection features include FET turn-on

interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and

over-temperature shut down. Ultra low slew rate setting

supports motor drive applications.