ISC011N04LM7SC

OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled (DSC) package

Infineon’s latest OptiMOS™ 7 ISC011N04LM7SC 40 V switching-optimized MOSFET delivers an exceptional balance of efficiency and switching performance. Combining 1.1 mΩ RDS(on) with only 20 nC Qg at 4.5 V and 49 nC QOSS, it enables lower switching losses, higher switching frequencies and increased power density. Optimized for GaN-compatible gate drive voltages, it is ideal for high current DC-DC, IBC and 48 V conversion.