IJCQ120RM50J1

CoolSiC™ JFET discrete 1200 V G1 in top-side cooled Q-DPAK package

CoolSiC™ JFET 1200 V in a Q-DPAK top-side-cooled package. Its low 5.0 mΩ typical RDS enables efficient current conduction in solid-state power-distribution and protection applications. High-current avalanche and surge-current ruggedness, linear-mode capability and overload operation up to a junction temperature of 200°C support demanding protection functions. The surface-mount package enables automated assembly and flexible top-side cooling.