IJCQ120RM26J1

CoolSiC™ JFET discrete 1200 V G1 in top-side cooled Q-DPAK package

CoolSiC™ JFET 1200 V in a Q-DPAK top-side-cooled package. Its ultra-low 2.6 mΩ typical RDS minimizes conduction losses in continuously conducting solid-state power-distribution and protection applications. High-current avalanche and surge-current ruggedness, linear-mode capability and overload operation up to a junction temperature of 200°C support demanding protection functions.