IG1C052N10RCDV

Rad hard, 100 V, 52 A, GaN transistor bare die

IR HiRel rad hard GaN transistor technology provides high performance power devices for space applications. These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE). This device, IG1C052N10RCDV, is in a bare die package and has a 100% visual inspection only screening level.