Automotive 4-A, 27-V half bridge gate driver with 4-V UVLO for synchronous rectification

The TPS28225-Q1 is a high-speed driver

for N-channel complementary driven power MOSFETs with adaptive dead-time control.

This driver is optimized for use in variety of high-current, single and multi-phase

DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size

and low-EMI emissions.

The TPS28225-Q1 device offers high

performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time

control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive

capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power

MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase

node transitions. The bootstrap capacitor is charged by an internal diode which

allows the use of an N-channel MOSFETs in a half-bridge configuration.

The TPS28225-Q1 is offered in an

economical SOIC-8 package and in a thermally enhanced small sized VSON package. The

driver is specified to operate in the temperature range of –40°C to 105°C with the

absolute maximum junction temperature of 150°C.