20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm | DQK | 6 | -55 to 150

This 19.9mΩ, –20V P-Channel device is designed to

deliver the lowest on resistance and gate charge in the smallest outline possible

with excellent thermal characteristics in an ultra-low profile. Its low on

resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic

package make the device ideal for battery operated space constrained operations.