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STGB10M65DF2 Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package

STMicroelectronics

STGB10M65DF2 Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package RSS 2.59 2.59 USD10.52 PLN
  • Sklep zagraniczny
MPN:
STGB10M65DF2
Producent:
STMicroelectronics
Obudowa:
TO-263
Waluta:
dolar amerykański
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
+0.39% (19.03.2026)
Poprzednia cena:
2.58 USD
Ilość [ x szt]: 10+ 100+ 500+
Cena USD [za szt]: 1.68 1.15 0.92

This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

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