12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection | YJM | 3 | -55 to 150

This –12-V,

97-mΩ, P-Channel FemtoFET™ MOSFET is designed

and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while

providing a substantial reduction in footprint size.