SFH610A-3 Optocoupler, phototransistor output, 5.3 KV, CTR 100-200%, DIP-4

DESCRIPTION The SFH610A (DIP) and SFH6106 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.

FEATURES - Good CTR linearity depending on forward current - Isolation test voltage, 5300 VRMS - High collector emitter voltage, VCEO = 70 V - Low saturation voltage - Fast switching times - Low CTR degradation - Temperature stable - Low coupling capacitance - End stackable, 0.100" (2.54 mm) spacing - High common mode interference immunity - Lead (Pb)-free component

AGENCY APPROVALS - UL1577, file no. E52744 system code H or J, double protection - DIN EN 60747-5-5 (VDE 0884) available with option 1 - CSA 93751 - BSI IEC 60950; IEC 60065

APPLICATIONS - Telecom - Industrial controls - Battery powered equipment - Office machines