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IKW25T120 IGBT transistor, N-CH, 1200V, 50A, 190W, TO-247

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IKW25T120 IGBT transistor, N-CH, 1200V, 50A, 190W, TO-247 RSS 6.72 6.72 EUR28.67 PLN
  • Sklep zagraniczny
MPN:
IKW25T120
Kod:
90412
Producent:
Infineon
Obudowa:
TO-247
GTIN-13:
9900000904128
Waluta:
euro
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
+13% (04.04.2025)
Poprzednia cena:
5.94 EUR

IKW25T120 1200V Low Loss DuoPack IGBT and Diode : IGBT in TrenchStop® and Fieldstop technology with soft and fast recovery anti-parallel Emitter Controlled HE diode

Features and Benefits: - Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D - Short circuit withstand time - 10µs - Designed for : - Frequency Converters - Uninterrupted Power Supply - TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI - Low Gate Charge - Very soft, fast recovery anti-parallel Emitter Controlled HE diode - qualified according to JEDEC for target applications - Pb-free lead plating, halogen-free mould compound, RoHS compliant - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

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