IRF1310NPBF MOSFET, N-Ch 100V 42A 0.036R 160W, TO-220AB

Fifth generation HEXFETs from international Rectiftier use advanced processing techniques to achieve extremely low on-resistance per silicon area. This advantage, combined with the fast switching speed and robust device design that HEXFETs Power MOSFETs are known for, provides the designer with an extremely efficient and reliable device for use in a wide range of applications. The TO-220 package is generally preferred for all commercial/industrial applications with power dissipation up to about 50 watts. The low thermal resistance and low cost of the TO-220 package contribute to its wide acceptance throughout the industry.

Features - advanced Process Technology - dynamic dv/dt Rating - 175°C Operating Temperature - fast Switching - fully Avalanche Rated - lead-Free