IRFBC40PBF MOSFET, N-Ch 600V 6.2A 125W, TO-220AB

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Benefit - low Gate Charge Qg results in Simple Drive Requirement - fully Characterized Capacitance and Avalanche Voltage and Current - improved Gate, Avalanche and Dynamic dv/dt Ruggedness - low Gate Charge Qg results in Simple Drive Requirement - effective Coss Specified ( See AN 1001)

Applications - Switch Mode Power Supply ( SMPS ) - uninterruptable Power Supply - High speed power switching