IRFP064NPBF MOSFET, N-Ch 55V 110A 0.008R, TO-247AC

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preffered for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Features - adavanced Process Technology - 175°C operating temperature - dynamic dv/dt Rating - fast Switching - fully avalanche rated - lead free