IRFU9024NPBF MOSFET, P-Ch, -55V -11A 0.175R, TO-251AA

Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely effecient and reliable device for use in a wide variety of applications. The D-park is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features - surface mount (IRFR120N) - sraight lead (IRFU120N) - advanced process technology - fast switching - fully avalanche rated - lead-free - P-Channel - ultra low on-resistance