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IRHMS57064 The JANSF2N7470T1 R5 N-channel MOSFET is a radiation-hardened device design...

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The JANSF2N7470T1 R5 N-channel MOSFET is a radiation-hardened device designed for space applications. It has a high voltage rating of 60V and a current rating of 45A. The low RDS(on) and low gate charge make it ideal for DC-DC converters and motor control. The device also features electrical performance up to 300krad(Si) TID and has been characterized for Single Event Effects (SEE).
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Infineon
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JANSF2N7470T1, JANSR2N7470T1
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