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    1ED2147S65F

    650 V high-side gate driver IC with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) EiceDRIVER™ 650 V high side single channel gate driver IC with a typical 4 A source and 4 A sink current in DSO-8 package for IGBTs, MOSFETs and SiC MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    669 kB
    Stron:
    21