300kr (25) » Noty katalogowe | elecena.pl - wyszukiwarka elementów elektronicznych

JANSR2N7592T3

JANSR2N7592T3 N-channel MOSFET is designed for high-performance power in space applications. These rad hard R6 MOSFETs are capable of up to 100V and 20A, with electrical performance up to 300krad(Si) TID. In a TO-257AA low ohmic package, these MOSFETs provide low RDS(on) and low gate charge for reduced power losses in switching applications. The MOSFETs are QPL qualified and retain all the benefits of MOSFET technology.

Producent:: Infineon
Rozmiar:: 1398 kB
Stron:: 14

Do dokumentacji »

JANTXVF2N7268

N-channel MOSFET JANTXVF2N7268 is a QPL-qualified rad hard device with QPL classification. It features 100V, 34A, and electrical performance up to 300krad(Si) TID in a TO-254AA package. IR HiRel rad hard R4 technology offers proven performance and reliability suitable for space applications. With low RDS(on) and gate charge, it reduces power losses in switching applications for DC-DC converters and motor control.

Producent:: Infineon
Rozmiar:: 1319 kB
Stron:: 13

Do dokumentacji »

JANSF2N7468U2A

JANSF2N7468U2A is a rad hard R5 N-channel MOSFET with 60V and 75A capacity. Housed in a SupIR-SMD package, the electrical performance is up to 300krad(Si) TID and QPL qualification. Low RDS(on) and gate charge reduce power losses for high performance and reliability in space applications. Switching applications such as DC-DC converters and motor control benefit from its proven flight heritage and reliability.

Producent:: Infineon
Rozmiar:: 1234 kB
Stron:: 8

Do dokumentacji »

JANSF2N7491T2

Rad hard JANSF2N7491T2 MOSFETs, using HEXFET technology, are ideal for space applications, with electrical performance up to 300krad(Si) TID and QPL qualification. With low RDS(on) and gate charge, these MOSFETs reduce power losses in switching applications such as DC-DC converters and motor controls. At 30V and 12A, these single N-channel MOSFETs offer fast switching, voltage control, and temperature stability.

Producent:: Infineon
Rozmiar:: 1228 kB
Stron:: 13

Do dokumentacji »

JANTXVF2N7389

JANTXVF2N7389 P-channel MOSFET is rad hard, with -100V and -6.5A, in a single TO-205AF package. It has electrical performance up to 300krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

Producent:: Infineon
Rozmiar:: 1206 kB
Stron:: 8

Do dokumentacji »

JANSR2N7660D5

JANSR2N7660D5 is a rad hard, single P-channel MOSFET in a TO-257AA Tabless low ohmic package. With -100V and -23A capabilities, this R9 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Producent:: Infineon
Rozmiar:: 1080 kB
Stron:: 15

Do dokumentacji »

IRHNPC9A3014

IRHNPC9A3014 R9 N-channel MOSFET is a rad hard, 60V, 10A MOSFET in a SMD-0.1 package. It has electrical performance up to 300krad(Si) TID and is COTS classified. This MOSFET provides superior power performance for space applications with improved immunity to SEE and LET up to 88.6 MeV·cm2/mg. Its low RDS(on) and fast switching times make it ideal for DC-DC converters or motor drives in power designs for satellite bus and payload systems.

Producent:: Infineon
Rozmiar:: 1076 kB
Stron:: 14

Do dokumentacji »

JANSF2N7494U5

JANSF2N7494U5 is a radiation-hardened, 30V, 12A N-channel MOSFET in an 18-pin LCC package, with electrical performance up to 300krad(Si) TID. This R5 device has low RDS(on) and low gate charge, making it ideal for switching applications such as DC-DC converters and motor control in space applications.

Producent:: Infineon
Rozmiar:: 1037 kB
Stron:: 13

Do dokumentacji »

IRHNJ67230A

IRHNJ67230A is a rad hard single N-channel MOSFET in a TO-254AA package. This COTS device has a voltage rating of 60V and a current rating of 35A. It is radiation hardened up to 300krad(Si) TID. With low RDS(on) and low gate charge, it is ideal for use in switching applications such as DC-DC converters and motor control in power systems for satellite bus and payload.

Producent:: Infineon
Rozmiar:: 1015 kB
Stron:: 14

Do dokumentacji »

JANSF2N7519U3

JANSF2N7519U3 is a rad hard, single P-channel MOSFET in a SMD-0.5 package. With -30V and -22A capabilities, this R4 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Producent:: Infineon
Rozmiar:: 992 kB
Stron:: 8

Do dokumentacji »

JANSF2N7506U8C

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. JANSF2N7506U8C is a rad hard, single P-channel MOSFET in a SMD-0.2 package. With -100V and -3.1A capabilities, this ceramic-lidded R4 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Producent:: Infineon
Rozmiar:: 959 kB
Stron:: 14

Do dokumentacji »

JANTXVF2N7425U

JANTXVF2N7425U P-channel MOSFET is rad hard, with -100V and -38A, in a single SMD-2 package. It has electrical performance up to 300krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

Producent:: Infineon
Rozmiar:: 941 kB
Stron:: 13

Do dokumentacji »

JANSF2N7483T3

The rad hard R5 N-channel MOSFET JANSF2N7483T3 is a high-performance power MOSFET designed for space applications. With a voltage rating of 60V and a current rating of 18A, this single N-channel device is ideal for use in DC-DC converters and motor control. Tested for TID and SEE, it offers reliable electrical performance up to 300krad(Si) and comes in a compact TO-257AA package.

Producent:: Infineon
Rozmiar:: 897 kB
Stron:: 13

Do dokumentacji »

JANSF2N7503U8C

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. JANSF2N7503U8C is a rad hard, 100V, 6.9A, single N-channel MOSFET housed in a SMD-0.2 package with ceramic lid. Its electrical performance can handle up to 300krad(Si) TID and the device has QPL classification. This R5 MOSFET has low power losses in switching applications such as DC-DC converters and motor control, and useful performance up to an LET of 80MeV·cm2/mg.

Producent:: Infineon
Rozmiar:: 839 kB
Stron:: 14

Do dokumentacji »

JANSG2N7469U2

This N-channel MOSFET is a radiation-hardened device in a SMD-2 package, rated at 100V and 69A. JANSG2N7469U2 offers electrical performance up to 300krad(Si) TID and QPL classification, with low RDS(on) and gate charge for reduced power losses in switching applications. This R5 device also offers voltage control, fast switching, and temperature stability.

Producent:: Infineon
Rozmiar:: 731 kB
Stron:: 13

Do dokumentacji »

JANSF2N7470T1

The JANSF2N7470T1 R5 N-channel MOSFET is a radiation-hardened device designed for space applications. It has a high voltage rating of 60V and a current rating of 45A. The low RDS(on) and low gate charge make it ideal for DC-DC converters and motor control. The device also features electrical performance up to 300krad(Si) TID and has been characterized for Single Event Effects (SEE).

Producent:: Infineon
Rozmiar:: 718 kB
Stron:: 13

Do dokumentacji »

JANTXVF2N7425

JANTXVF2N7425 P-channel MOSFET is rad hard, with -100V and -35A, in a single TO-254AA package. It has electrical performance up to 300krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

Producent:: Infineon
Rozmiar:: 683 kB
Stron:: 8

Do dokumentacji »

JANSF2N7468U2

JANSF2N7468U2 is a single N-channel MOSFET in a SMD-2 package, with a maximum voltage rating of 60V and maximum current rating of 75A. Its electrical performance is up to 300krad(Si) TID, and it is QPL-qualified. Its IR HiRel R5 HEXFET technology provides high performance heritage for power MOSFETs in space applications, with low RDS(on) and low gate charge for reduced power losses in switching applications.

Producent:: Infineon
Rozmiar:: 628 kB
Stron:: 14

Do dokumentacji »

JANSF2N7520T3

JANSF2N7520T3 is a rad hard, single P-channel MOSFET in a TO-257AA low ohmic package. With -60V and -20A capabilities, this R5 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Producent:: Infineon
Rozmiar:: 394 kB
Stron:: 8

Do dokumentacji »

JANSF2N7524D4

JANSF2N7524D4 is a rad hard, single P-channel MOSFET in a TO-254AA Tabless low ohmic package package. With -60V and -45A capabilities, this R5 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Producent:: Infineon
Rozmiar:: 384 kB
Stron:: 8

Do dokumentacji »

JANSF2N7524U2

JANSF2N7524U2 is a rad hard, single P-channel MOSFET in a SMD-2 package. With -60V and -56A capabilities, this R5 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Producent:: Infineon
Rozmiar:: 383 kB
Stron:: 8

Do dokumentacji »

IRHNM9A3120SCS

From 20 V to 650 V, space-qualified to DLA and ESA standards. This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHNM9A3120SCS is a rad hard R9 N-channel MOSFET in a SMD-0.2 package. With a voltage rating of 100V and a current rating of 23A, this single MOSFET is ideal for space applications. This space-grade QIRL part has electrical performance up to 300krad(TID) and its low RDS(on) and fast switching times make it perfect for DC-DC

Producent:: Infineon
Rozmiar:: 373 kB
Stron:: 9

Do dokumentacji »

JANSF2N7524T1

JANSF2N7524T1 is a rad hard, single P-channel MOSFET in a TO-254AA low ohmic package. With -60V and -45A capabilities, this R5 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Producent:: Infineon
Rozmiar:: 371 kB
Stron:: 8

Do dokumentacji »

JANSF2N7524U2A

JANSF2N7524U2A is a rad hard, single P-channel MOSFET in a SupIR-SMD package. With -60V and -56A capabilities, this R5 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

Producent:: Infineon
Rozmiar:: 366 kB
Stron:: 8

Do dokumentacji »

JANSF2N7546U3

The P-channel MOSFET JANSF2N7546U3 is a single, rad hard component with a -200V rating and -8.0A capacity. Its SMD-0.5 package has electrical performance capabilities up to 300krad(Si) TID and QPL qualification, making it ideal for space applications. With its low RDS(on) and power losses, the R5 MOSFET is well-suited for DC-DC converters and motor drives in space power systems.

Producent:: Infineon
Rozmiar:: 338 kB
Stron:: 8