2ED1322S12M

1200 V high current half-bridge gate driver IC with integrated bootstrap diode and OCP EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1322S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robu

EN25QH256

Pamięć szeregowa Flash SPI, , 3.0V, 80MHz, SOP16 300mil

2ED1324S12P

1200 V half-bridge gate driver IC with AMC (Active Miller Clamp), SCC (Short Circuit Clamp) EiceDRIVER™ 1200 V half-bridge gate driver IC with 2.3 A source, 2.3 A sink current and cross conduction prevention in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1324S12P supports Active Miller Clamp (AMC), Short Circuit Clamp (SCC) and Cross conduction prevention for the best in class switching performance in the sufficient creepage/clea

EN25Q128

Pamięć szeregowa Flash SPI, , 3.0V, 104MHz, SOP16 300mil

SOP_Wells

Adapter uniwersalny SOIC32 / SOP32 / SO32 (R=1,27mm / W=300mils) --> PDIP32 (R=2,54mm / W=600mils) ZIF Wells CTI

74HCT646-300MILS

ACA-SPI-006-K01

Podstawka testowa SOP16 /SO16 / SOIC16 (SMD) eZIF Lotes R=1,27mm (SPI Flash Socket) 300mils