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    GS66516B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.
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    Infineon
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    1143 kB
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    17
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    GS-065-060-5-T-A-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-060-5-T-A-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-060-5-T-A-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as on-board and off-board EV chargers, traction drive, ACDC and DCDC converters, industrial power supplies and renewable energ
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    Infineon
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    1124 kB
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    18
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    GS66516T-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66516T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.
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    Infineon
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    1099 kB
    Stron:
    18
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    GS66504B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66504B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66504B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    1052 kB
    Stron:
    17
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    GS66508T-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66508T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.
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    Infineon
    Rozmiar:
    1038 kB
    Stron:
    20
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    GS66508B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66508B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508B-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    1008 kB
    Stron:
    20
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    GS66506T-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66506T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66506T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.
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    Infineon
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    976 kB
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    18
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    GS66502B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66502B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66502B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    938 kB
    Stron:
    17
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    ACD0804

    Producent:
    ClassicCMP
    Rozmiar:
    611 kB
    Stron:
    36
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    23825

    Müller SC 18.10 easy 12V ACDC Przekaźnik czasowy na szynę DIN cyfrowy 12 V/DC, 12 V/AC 4000 W
    Producent:
    Müller
    Rozmiar:
    503 kB
    Stron:
    2
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    23823

    Müller SC 18.10 easy 24V ACDC Przekaźnik czasowy na szynę DIN cyfrowy 24 V/DC, 24 V/AC 4000 W
    Producent:
    Müller
    Rozmiar:
    503 kB
    Stron:
    2
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    ACD4V4-1

    ACD-04 Automatyczny ściemniacz oświetlenia zegarem
    Producent:
    Jabel
    Rozmiar:
    186 kB
    Stron:
    1
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    ACD06

    ACD-06 Automatyczny ściemniacz oświetlenia z zegarem do lamp jarzeniowych
    Producent:
    Jabel
    Rozmiar:
    158 kB
    Stron:
    1
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    22385

    Müller SC 28.21 pro4 12V ACDC Przekaźnik czasowy na szynę DIN cyfrowy 12 V/DC, 12 V/AC 4000 W
    Producent:
    Müller
    Rozmiar:
    128 kB
    Stron:
    2
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    COCO ACDB-6500AC DZWONEK

    Producent:
    Meditronik
    Rozmiar:
    61 kB
    Stron:
    3