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    XDP730-001

    Stackable 30 A, 1.5 mΩ electronic fuse (eFuse) with PMBus® interface for 7 V to 80 V DC rails in a small LIQFN-42 package Infineon's XDP730-001 eFuse integrates a hot-swap controller, a low RDS(on) FET with up to 30 A current carrying capability, and a current sense in a small 7 mm x 7 mm package. With its wide operating voltage range, Surge Immunity, telemetry, and extensive list of protection features against e.g., inrush current, under- and overvoltage, and overcurrent, it is especially suitable for sop
    Producent:
    Infineon
    Rozmiar:
    4927 kB
    Stron:
    83
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    XDP720-001

    Stackable 20 A, 3.2 mΩ electronic fuse (eFuse) with PMBus® interface for 7V to 80V DC rails in a small LIQFN-23 package Infineon's XDP720-001 eFuse integrates a hot-swap controller, a low RDS(on) FET with up to 20 A current carrying capability, and a current sense in a small 6 mm x 5 mm package. With its wide operating voltage range, Surge Immunity, telemetry, and extensive list of protection features against e.g., inrush current, under- and overvoltage, and overcurrent, it is especially suitable for sophi
    Producent:
    Infineon
    Rozmiar:
    2962 kB
    Stron:
    85
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    XDP722-001

    Stackable 20 A, 3.2 mΩ electronic fuse (eFuse) for 7V to 80V DC rails in a small LIQFN-23 package Infineon's XDP722-001 eFuse integrates a hot-swap controller, a low RDS(on) FET with up to 20 A current carrying capability, and a current sense in a small 6 mm x 5 mm package. With its wide operating voltage range, and extensive list of protection features against e.g., inrush current, under- and overvoltage, and overcurrent, it is especially suitable for 48 V/54 V (AI) server/data center and fan control appl
    Producent:
    Infineon
    Rozmiar:
    2023 kB
    Stron:
    38
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    AIMZHN120R160M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1632 kB
    Stron:
    16
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    AIMZHN120R060M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1588 kB
    Stron:
    16
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    6ED2231S12C

    1200 V, 0.65 A three phase gate driver IC bare die with integrated bootstrap diode and over current protection EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2231S12C provides unique advantages including low-ohmic integrated bootstrap-diode (BSD) and best-in-class robustness to protect against negative transient voltage spikes. It is for designs up to about 6 kW. Contact our sales offices for sample
    Producent:
    Infineon
    Rozmiar:
    1120 kB
    Stron:
    28
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    IDWD10G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1119 kB
    Stron:
    10
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    IDWD80G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 80 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1079 kB
    Stron:
    10
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    IDWD25G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1033 kB
    Stron:
    10
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    IDWD40G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 40 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1021 kB
    Stron:
    10
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    IDWD50G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 50 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    976 kB
    Stron:
    10
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    BK/AGA-1/2

    Fuse Miniature 0.5A 125V Fast 2-Pin Cartridge Holder Bulk
    Producent:
    Eaton
    Rozmiar:
    446 kB
    Stron:
    2
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    iW7027

    16-Channel, External Current Sinks LED Driver with Patented 2-pin Sensing to Protect Against LED Shorts
    Producent:
    Renesas Electronics
    Rozmiar:
    286 kB
    Stron:
    2
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    32123062

    Bopla Elegant EG 1230 F 32123062 Obudowa elektroniki polistyren szaro-biały (ral 7035), Agatowy szary (RAL 7038) 1 szt.
    Producent:
    Bopla
    Rozmiar:
    131 kB
    Stron:
    1
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    32156062

    Bopla Elegant EG 1560 F 32156062 Obudowa elektroniki polistyren szaro-biały (ral 7035), Agatowy szary (RAL 7038) 1 szt.
    Producent:
    Bopla
    Rozmiar:
    53 kB
    Stron:
    1