BGT60CUTR13AIP

Next-generation, ultra-low-power XENSIV™ 60 GHz CMOS radar with integrated processing for IoT applications The BGT60CUTR13AIP is a 60 GHz FMCW radar sensor with Antennas-in-Package (AIP) in an L-shaped array, optimized for ultra-low-power IoT devices. It features integrated processing via a hardware accelerator (HWA), as well as supporting blocks for an optimized system architecture. With an integrated bootloader, it enables autonomous presence detection. The MMIC is configured via SPI, allowing for easy i

2EDR3142XQE

5.7 kV (rms) dual-channel gate driver IC with AEC-Q100 qualification, reinforced isolation, 6.5 A output current, 4.8 V UVLO EiceDRIVER™ Compact 2300 V dual-channel isolated gate driver with +/-6.5 A typical peak output current in a 14-pin DSO wide body package for GaN HEMTs, IGBTs, MOSFETs and SiC MOSFETs. Qualified according to AEC-Q100. Offers dead-time control (DTC) and independent channel operation, allowing for operation as a dual-channel low-side driver, a dual-channel high-side driver, or a half-br

IMZC140R038M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 38 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

IMZC140R019M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 19 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

IMZC140R024M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 24 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

IMZC140R029M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 29 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

IMZC140R011M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 11 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

IGL65R080D2

CoolGaN™ Transistor 650 V G5 The IGL65R080D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

IGL65R140D2

CoolGaN™ Transistor 650 V G5 The IGL65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

IGL65R110D2

CoolGaN™ Transistor 650 V G5 The IGL65R11D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

IGL65R055D2

CoolGaN™ Transistor 650 V G5 The IGL65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

IGD70R500D2S

CoolGaN™ Transistor 700 V G5 The IGD70R500D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.

IGD70R140D2S

CoolGaN™ Transistor 700 V G5 The IGD70R140D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.

IGD70R270D2S

CoolGaN™ Transistor 700 V G5 The IGD70R270D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.

IGD70R200D2S

CoolGaN™ Transistor 700 V G5 The IGD70R200D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.

IRHNME9A7024

Rad hard, 60 V, 25 A, rad hard MOSFET in SMD-0.2e Ceramic Lid package – 100 krad TID, COTS IRHNME9A7024 is a R9 generation, rad hard, single N-channel MOSFET in a SMD-0.2e package with a ceramic lid that can handle 60V and 25A. It is optimal for space applications as its combination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converter or motor drives. This device retains all of the well established advantages of MOSFETs such as voltage control an

TLE4971-A050N5-E0002

XENSIV™ - TLE4971-A050N5-E0002 high precision coreless current sensor with single-ended analog interface and dual fast over-current detection outputs Coreless automotive current sensor, pre-programmed offers high precision current measurement in applications with lower currents usable for AC and DC measurements. All negative effects commonly known from sensors using flux concentration techniques are avoided. The differential measurement principle allows great stray field suppression for operation in harsh

NFR2500002701JA100

Res Metal Alloy 2.7K Ohm 5% 1/3W ±100ppm/°C Conformal AXL Thru-Hole Ammo Pack

NA24WK ALLOCATION

10099116-001LF

Thrml Mgmt Access Heat Sink Clip Copper Alloy

2EDN1153DAA

12 V smart dual-channel high-side MOSFET gate driver with SPI enabling advanced automotive applications EiceDRIVER™ APD 2EDN1153DAA is an ISO 26262 compliant dual-channel protected high-side MOSFET gate driver for 12 V applications. Its high digital integration allows the monitoring of many signals (such as gate, source, drain voltages) with configurable thresholds for an improved system control. The advanced feature set make it the ideal device for safe, efficient and scalable electrification for modern v

2EDN1132DAA

12 V smart dual-channel high-side MOSFET gate driver with SPI enabling advanced automotive applications EiceDRIVER™ APD 2EDN1132DAA is an ISO 26262-compliant dual-channel protected high-side MOSFET gate driver for 12 V applications. Its high digital integration allows the monitoring of many signals (such as gate, source, drain voltages) with configurable thresholds for an improved system control. The advanced feature set make it the ideal device for safe, efficient and scalable electrification for modern v

10099115-002LF

Heat Sink Passive Aluminum Alloy Nickel

MVW

Carbon Film (Metal Alloy) Resistors, Special Purpose, High Voltage