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    IAUZN04S7N026

    40 V, N-Ch, 2.64 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2946 kB
    Stron:
    12
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    IAUZN04S7N013

    40 V, N-Ch, 1.33 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2945 kB
    Stron:
    12
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    IAUZN04S7N020

    40 V, N-Ch, 2 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2935 kB
    Stron:
    12
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    IAUZN04S7N049

    40 V, N-Ch, 4.93 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2924 kB
    Stron:
    12
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    IAUZN04S7L046

    40 V, N-Ch, 4.59 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2913 kB
    Stron:
    12
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    IAUZN04S7L012

    40 V, N-Ch, 1.25 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2305 kB
    Stron:
    12
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    IAUZN04S7L019

    40 V, N-Ch, 1.90 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2303 kB
    Stron:
    12
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    IAUZN04S7L030

    40 V, N-Ch, 3.05 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2300 kB
    Stron:
    12
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    IAUZN04S7L025

    40 V, N-Ch, 2.56 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2298 kB
    Stron:
    12
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    IAUZN04S7N032

    40 V, N-Ch, 3.25 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2294 kB
    Stron:
    12
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    IGI65D1414A3MS

    Two 140 mΩ / 650 V GaN tranistors in half-bridge configuration IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package. This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.
    Producent:
    Infineon
    Rozmiar:
    1970 kB
    Stron:
    22
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    ISC151N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC151N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. due to the industry-leading RDS(on), improved switching behavior, and improved current sharing the new OptiMOS™ 6 enables higher power density, less parallelin
    Producent:
    Infineon
    Rozmiar:
    1324 kB
    Stron:
    11
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    ISZ520N20NM6

    OptiMOS™ 6 power MOSFET 200 V in PQFN 3.3x3.3 package ISZ520N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. due to the industry-leading RDS(on), improved switching behavior, and improved current sharing the new OptiMOS™ 6 enables higher power density, less paralleling, and be
    Producent:
    Infineon
    Rozmiar:
    1261 kB
    Stron:
    12
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    ISC130N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC130N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. due to the industry-leading RDS(on), improved switching behavior, and improved current sharing the new OptiMOS™ 6 enables higher power density, less parallelin
    Producent:
    Infineon
    Rozmiar:
    1065 kB
    Stron:
    11
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    CYEL18V2562-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    1054 kB
    Stron:
    56
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    IPT067N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in TO-Leadless package IPT067N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. due to the industry-leading RDS(on), improved switching behavior, and improved current sharing the new OptiMOS™ 6 enables higher power density, less paralle
    Producent:
    Infineon
    Rozmiar:
    1024 kB
    Stron:
    11
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    IPT129N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in TO-Leadless package IPT129N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. due to the industry-leading RDS(on), improved switching behavior, and improved current sharing the new OptiMOS™ 6 enables higher power density, less paralle
    Producent:
    Infineon
    Rozmiar:
    1002 kB
    Stron:
    14
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    CYEL18V5122-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    974 kB
    Stron:
    52
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    IPP069N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package IPP069N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. due to the industry-leading RDS(on), improved switching behavior, and improved current sharing the new OptiMOS™ 6 enables higher power density, less paralleling,
    Producent:
    Infineon
    Rozmiar:
    896 kB
    Stron:
    12
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    5340786

    Miernik cęgowy cyfrowy Beha Amprobe Fluke AMP-25 KIT 5340786, CAT III 600 V, kalibracja fabryczna (bez certyfikatu)
    Producent:
    Beha Amprobe
    Rozmiar:
    890 kB
    Stron:
    2
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    CYEL18V2563-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    841 kB
    Stron:
    51
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    CYEL18V5123-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM and SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8- channel serial SRAM. This innovative technology is packaged in a compact, low pin count plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites th
    Producent:
    Infineon
    Rozmiar:
    780 kB
    Stron:
    50
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    5256883-DAkkS

    Dwubiegunowy tester napięcia Beha Amprobe 2100-GAMMA PRO CAT IV 600 V, CAT III 1000 V Kalibracja (DAkkS)
    Producent:
    Beha Amprobe
    Rozmiar:
    670 kB
    Stron:
    3