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    TLI55910-A6E-E0001

    XENSIV™ - TLI55910-A6E-E0001 high-sensitivity and low-power linear TMR position sensor for precise measurements The TLI55910 is a high-sensitivity and low-power linear position sensor that leverages tunnel magnetoresistance (TMR) technology to deliver precise linear measurements. This non-amplified analog sensor can measure magnetic fields with in a range of ±35 mT and boasts a large ratiometric output sensitivity of 5 mV/V/mT. This device is a versatile solution for various measurements such as displaceme
    Producent:
    Infineon
    Rozmiar:
    1241 kB
    Stron:
    14
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    IRHM7360SE

    The rad hard N-channel MOSFET IRHM7360SE is a high performance power MOSFET designed for space applications. It boasts 400V and 22A, with electrical performance up to 100krad(Si) TID. Built with IR HiRel technology, it has low RDS(on) and gate charge, and is classified under COTS. With low power losses and fast switching, it's perfect for DC-DC converters and motor control.
    Producent:
    Infineon
    Rozmiar:
    1152 kB
    Stron:
    13
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    CYEL18V2562-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    1054 kB
    Stron:
    56
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    CYEL18V5122-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    974 kB
    Stron:
    52
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    IMTA65R020M2H

    CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    935 kB
    Stron:
    17
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    IMTA65R060M2H

    CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package, 60 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    931 kB
    Stron:
    17
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    IMTA65R040M2H

    CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    930 kB
    Stron:
    17
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    IMTA65R050M2H

    CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package, 50 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    929 kB
    Stron:
    17
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    BGAP2D20A

    The BGA P2D20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boast
    Producent:
    Infineon
    Rozmiar:
    910 kB
    Stron:
    9
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    CYEL18V2563-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    841 kB
    Stron:
    51
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    CYEL18V5123-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM and SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8- channel serial SRAM. This innovative technology is packaged in a compact, low pin count plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites th
    Producent:
    Infineon
    Rozmiar:
    780 kB
    Stron:
    50
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    KP226E3408

    XENSIV™ - KP226E3408 analog Turbo MAP sensor with improved accuracy pressure sensing The Infineon KP226E3408 expands the broad family of Turbo MAP sensors, boasting improved accuracy in pressure sensing. This automotive-qualified MAP sensor with 3.8 kPa accuracy is ideal for automotive applications like ECU, while also suitable for industrial and consumer uses due to its high accuracy, sensitivity, and safety features.
    Producent:
    Infineon
    Rozmiar:
    770 kB
    Stron:
    19
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    BGAP2D30A

    The BGA P2D30A is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boast
    Producent:
    Infineon
    Rozmiar:
    755 kB
    Stron:
    9
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    BGA7P220

    BGA7P220 driver amplifier The BGA7P220 is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 27.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The driver amplifier boasts high linearity and an excellent wide-
    Producent:
    Infineon
    Rozmiar:
    372 kB
    Stron:
    11
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    BGA7P320

    BGA7P320 driver amplifier The BGA7P320 is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 27.8 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The driver amplifier boasts high linearity and an excellent wide-
    Producent:
    Infineon
    Rozmiar:
    372 kB
    Stron:
    11