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    IPQC60R040S7

    Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge re
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    Infineon
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    1379 kB
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    14
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    IPQC60R017S7

    Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge re
    Producent:
    Infineon
    Rozmiar:
    1374 kB
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    14
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    IPQC60R010S7

    Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge re
    Producent:
    Infineon
    Rozmiar:
    1371 kB
    Stron:
    14
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    IPDQ60R022S7

    Low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays and circuit breakers. For these designs, the S7 MOSFETs are complemented by the rest of the CoolMOS™ family, low-voltage OptiMOS™ and medium-voltage MOSFETs, galvanically isol
    Producent:
    Infineon
    Rozmiar:
    1287 kB
    Stron:
    14
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    IPDQ60R040S7

    Low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays and circuit breakers. For these designs, the S7 MOSFETs are complemented by the rest of the CoolMOS™ family, low-voltage OptiMOS™ and medium-voltage MOSFETs, galvanically isol
    Producent:
    Infineon
    Rozmiar:
    1281 kB
    Stron:
    14
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    IPDQ60R065S7

    Low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays and circuit breakers. For these designs, the S7 MOSFETs are complemented by the rest of the CoolMOS™ family, low-voltage OptiMOS™ and medium-voltage MOSFETs, galvanically isol
    Producent:
    Infineon
    Rozmiar:
    1266 kB
    Stron:
    14
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    IPDQ60R017S7

    Lowest RDS(on) *A 600 V SJ MOSFET in the novel top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-powe
    Producent:
    Infineon
    Rozmiar:
    1262 kB
    Stron:
    14
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    IMDQ75R007M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 7 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 7 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers
    Producent:
    Infineon
    Rozmiar:
    1251 kB
    Stron:
    20
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    IMDQ75R004M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 4 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 4 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers
    Producent:
    Infineon
    Rozmiar:
    1219 kB
    Stron:
    19
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    IPP60R040S7

    Infineon’s best price performance Superjunction MOSFET for low frequency switching applications in TO-220 package With a design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R040S7) in TO-220 features an optimal RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, in-rush relays, PLCs , HV DC lines, power solid state relays and solid-state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and redu
    Producent:
    Infineon
    Rozmiar:
    1091 kB
    Stron:
    14
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    IPP60R065S7

    Infineon’s best price performance Superjunction MOSFET for low frequency switching applications in TO-220 package With a design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R065S7) in TO-220 features an optimal RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, in-rush relays, PLCs , HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and redu
    Producent:
    Infineon
    Rozmiar:
    1084 kB
    Stron:
    14
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    4-1393250-5

    Wyłącznik obwodu TE Connectivity TE AMP Circuit Breakers 4-1393250-5
    Producent:
    TE Connectivity
    Rozmiar:
    183 kB
    Stron:
    4
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    1-1423696-5

    TE Connectivity TE AMP Circuit Breakers
    Producent:
    TE Connectivity
    Rozmiar:
    172 kB
    Stron:
    4
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    2-1393250-7

    Wyłącznik obwodu TE Connectivity TE AMP Circuit Breakers 2-1393250-7
    Producent:
    TE Connectivity
    Rozmiar:
    134 kB
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    4
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    6-1393246-5

    Wyłącznik obwodu TE Connectivity TE AMP Circuit Breakers 6-1393246-5
    Producent:
    TE Connectivity
    Rozmiar:
    133 kB
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    4
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    1-1393249-9

    Wyłącznik obwodu TE Connectivity TE AMP Circuit Breakers 1-1393249-9
    Producent:
    TE Connectivity
    Rozmiar:
    132 kB
    Stron:
    4