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    EVAL-TOLT-DC48V-3KW

    3 kW BLDC motor drive inverter power board based on TOLT with top-side cooling The evaluation board uses high-efficiency 100V OptiMOS™ 5 power MOSFETs in a top-side cooling TOLT package for the motor drive inverter power stage, increasing power handling for 3-phase BLDC motor drives. It operates with Infineon’s XMC1300 Drive Card and includes firmware for trapezoidal control of 48V BLDC motors with hall sensors. Additionally, it supports FOC commutation with the XMC4400 drive card, featuring three current
    Producent:
    Infineon
    Rozmiar:
    2875 kB
    Stron:
    42
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    IPS2550

    Inductive Position Sensor for High-Speed Motor Commutation (Automotive)
    Producent:
    Renesas Electronics
    Rozmiar:
    1862 kB
    Stron:
    52
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    IPS2200BI1W

    Inductive Position Sensor for High-Speed Motor Commutation
    Producent:
    Renesas Electronics
    Rozmiar:
    1440 kB
    Stron:
    36
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    IMZA120R007M1H

    CoolSiC™ 1200 V, 7 mΩ SiC Trench MOSFET in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G1 in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
    Producent:
    Infineon
    Rozmiar:
    1428 kB
    Stron:
    16
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    IMZA120R040M1H

    CoolSiC™ 1200 V, 40 mΩ SiC Trench MOSFET in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G1 in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
    Producent:
    Infineon
    Rozmiar:
    1423 kB
    Stron:
    16
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    IMZA120R020M1H

    CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 20 mΩ G1 in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
    Producent:
    Infineon
    Rozmiar:
    1422 kB
    Stron:
    16
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    IMZA120R014M1H

    CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 14 mΩ G1 in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
    Producent:
    Infineon
    Rozmiar:
    1418 kB
    Stron:
    16
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    IMZA120R030M1H

    CoolSiC™ 1200 V, 30 mΩ SiC Trench MOSFET in TO-247-4 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof bod
    Producent:
    Infineon
    Rozmiar:
    1364 kB
    Stron:
    16
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    IMW120R007M1H

    CoolSiC™ 1200 V, 7 mΩ SiC Trench MOSFET in TO247-3 package CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
    Producent:
    Infineon
    Rozmiar:
    1298 kB
    Stron:
    16
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    IMW120R040M1H

    CoolSiC™ 1200 V, 40 mΩ SiC Trench MOSFET in TO247-3 package CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
    Producent:
    Infineon
    Rozmiar:
    1295 kB
    Stron:
    16
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    IMW120R020M1H

    CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-3 package CoolSiC™ MOSFET discrete 1200 V, 20 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
    Producent:
    Infineon
    Rozmiar:
    1293 kB
    Stron:
    16
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    IMW120R014M1H

    CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package CoolSiC™ MOSFET discrete 1200 V, 14 mΩ G1 in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
    Producent:
    Infineon
    Rozmiar:
    1291 kB
    Stron:
    16
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    BTA204W-600D

    Guaranteed commutation three-quadrant triacs
    Producent:
    NXP
    Rozmiar:
    125 kB
    Stron:
    8
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    BTA204W-600B

    High commutation three-quadrant triacs
    Producent:
    NXP
    Rozmiar:
    115 kB
    Stron:
    8