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    MA2306DNS

    2x63 W, 13.5-26 V, ultra-low idle power, inductor-less operation, integrated DSP The MA2306DNS is a 2x63 W audio amplifier with I2S/TDM audio interface. It features the MERUS™ multilevel switching amplifier technology. Multilevel switching relaxes EMI and enables inductor‑less applications with lower cost and no compromise in audio performance or efficiency, battery life and reduced battery cell cost. The integrated DSP in the MA2306DNS is highly configurable.
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    2365 kB
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    48
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    MA2306PNS

    2x63 W, 13.5-26 V, ultra-low idle power, inductor-less operation, volume control & peak limiter The MA2306PNS is a 2x63 W audio amplifier with I2S/TDM audio interface. It features the MERUS™ multilevel switching amplifier technology. Multilevel switching relaxes EMI and enables inductor‑less applications with lower cost and no compromise in audio performance or efficiency, battery life and reduced battery cell cost. The 2306PNS offers a simpler volume control and a peak limiter.
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    Infineon
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    2270 kB
    Stron:
    47
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    IM67D128B

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM67D128B – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life and environmental robustness in an exceptionally small package. With a Signal-to-noise ratio (SNR) of 67dB(A) and low corner frequency of 10Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM67D128B balances performance in a ver
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    2219 kB
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    22
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    MA2304DNS

    MERUS™ class-D audio amplifier, 2x37 W, 10-20 V, ultra-low idle power, inductor-less operation, integrated DSP The MA2304DNS is a 2x37 W audio amplifier with integrated audio DSP and I2S/TDM audio interface. It features the MERUS™ multilevel switching amplifier technology enabling unmatched power efficiency at both low and high output power. Multilevel switching also relaxes EMI and enables inductor‑less applications with lower cost and no compromise in audio performance or efficiency. An integrated DSP is
    Producent:
    Infineon
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    2147 kB
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    44
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    IM68D128B

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM68D128B – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life and environmental robustness in a small package. With a Signal-to-noise ratio (SNR) of 67.5dB(A) and low corner frequency of 20Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM68D128B balances performance in a small package at
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    Infineon
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    2121 kB
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    20
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    MA2304PNS

    MERUS™ class-D audio amplifier, 2x37 W, 10-20 V, ultra-low idle power, inductor-less operation, with volume control and peak limiter The MA2304PNS is a 2x37 W audio amplifier with integrated audio DSP and I2S/TDM audio interface. It features the MERUS™ multilevel switching amplifier technology enabling unmatched power efficiency at both low and high output power. Multilevel switching also relaxes EMI and enables inductor‑less applications with lower cost and no compromise in audio performance or efficiency
    Producent:
    Infineon
    Rozmiar:
    2058 kB
    Stron:
    43
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    IM66D130M

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM66D130M – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life, very high AOP and environmental robustness in a small package. With a Signal-to-noise ratio (SNR) of 66dB(A) and low corner frequency of 35Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM66D130M balances performance in a sma
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    Infineon
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    1952 kB
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    22
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    IMYH200R075M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, s
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    Infineon
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    1859 kB
    Stron:
    16
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    IMYH200R012M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, s
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    Infineon
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    1859 kB
    Stron:
    16
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    IMYH200R100M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters,
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    Infineon
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    1842 kB
    Stron:
    16
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    IMYH200R024M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, s
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    Infineon
    Rozmiar:
    1835 kB
    Stron:
    16
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    IMYH200R050M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, s
    Producent:
    Infineon
    Rozmiar:
    1822 kB
    Stron:
    16
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    OPTIGA-AUTHENTICATE-ON

    The ideal anti-counterfeiting solution for mobile device batteries OPTIGA™ Authenticate On is an authentication solution optimized for mobile device batteries, designed to be easily integrated into even the smallest phone or tablet batteries without compromising performance or reliability. It is a one-package bus-powered solution that reduces the bill of materials and simplifies implementation.
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    Infineon
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    1155 kB
    Stron:
    17
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    IM66D132H

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM66D132H – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life, high sensitivity and environmental robustness in a small package. With a Signal-to-noise ratio (SNR) of 66.5dB(A) and low corner frequency of 20Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM66D132H balances performance in
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    950 kB
    Stron:
    22
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    IM68D121J

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM68D121J – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life, very high AOP and environmental robustness in a small package. With a Signal-to-noise ratio (SNR) of 68dB(A) and low corner frequency of 20Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM68D121J balances performance in a sma
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    Infineon
    Rozmiar:
    712 kB
    Stron:
    22
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    CO/BL/90/WM

    Uchwyt do montażu na ścianie ComPro CO/BL/90/WM
    Producent:
    ComPro
    Rozmiar:
    349 kB
    Stron:
    1
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    CO/BL/50/WM

    Uchwyt do montażu na ścianie ComPro CO/BL/50/WM
    Producent:
    ComPro
    Rozmiar:
    349 kB
    Stron:
    1
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    CO ST WM

    Rurka z uchwytem ściennym ComPro CO ST WM
    Producent:
    ComPro
    Rozmiar:
    337 kB
    Stron:
    3
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    AC/W

    Syrena wielotonowa Askari Compact ComPro AC/W, 32 tony, IP2.1
    Producent:
    ComPro
    Rozmiar:
    137 kB
    Stron:
    1
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    AF/R

    Brzęczyk elektroniczny - wielotonowy ComPro Askari Flange 9-28V/DC IP65 32 tony, czerw.
    Producent:
    ComPro
    Rozmiar:
    137 kB
    Stron:
    1