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    IGB110S10S1Q

    CoolGaN™ Automotive Transistor 100 V G1 in PQFN 3x3, 11 mΩ The IGB110S10S1Q is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. The device is qualified according to the AEC-Q101 standard and thanks to its low on-state resistance, it is the ideal choice for reliable performance in a broad range of automotive applications.
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    4990 kB
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    17
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    IGC033S10S1Q

    CoolGaN™ Automotive Transistor 100 V G1 in PQFN 3x5, 3.3 mΩ The IGC033S10S1Q is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. The device is qualified according to the AEC-Q101 standard and thanks to its low on-state resistance, it is the ideal choice for reliable performance in a broad range of automotive applications.
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    3911 kB
    Stron:
    17
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    IGI60L1111B1M

    110 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode IGI60L1111B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 110 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.
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    2162 kB
    Stron:
    26
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    IGI65D1414A3MS

    Two 140 mΩ / 650 V GaN tranistors in half-bridge configuration IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package. This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.
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    1970 kB
    Stron:
    22
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    IGI60L2727B1M

    270 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode IGI60L2727B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 270 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.
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    1623 kB
    Stron:
    26
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    IGI60L5050B1M

    500 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode IGI60L5050B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 500 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.
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    1576 kB
    Stron:
    26
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    IGI60L1414B1M

    140 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode IGI60L1414B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 140 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.
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    1503 kB
    Stron:
    26
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    IGT65R140D2

    CoolGaN™ Transistor 650 V G5 The IGT65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various consumer and industrial applications.
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    Infineon
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    1482 kB
    Stron:
    18
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    IGLR70R270D2S

    CoolGaN™ Transistor 700 V G5 The IGLR70R270D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1331 kB
    Stron:
    19
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    IGLR65R270D2

    CoolGaN™ Transistor 650 V G5 The IGLR65R270D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1330 kB
    Stron:
    19
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    IGLR70R140D2S

    CoolGaN™ Transistor 700 V G5 The IGLR70R140D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
    Rozmiar:
    1330 kB
    Stron:
    19
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    IGLR70R200D2S

    CoolGaN™ Transistor 700 V G5 The IGLR70R200D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1330 kB
    Stron:
    19
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    IGLR65R200D2

    CoolGaN™ Transistor 650 V G5 The IGLR65R200D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1329 kB
    Stron:
    19
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    IGL65R080D2

    CoolGaN™ Transistor 650 V G5 The IGL65R080D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1308 kB
    Stron:
    20
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    IGL65R140D2

    CoolGaN™ Transistor 650 V G5 The IGL65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1305 kB
    Stron:
    20
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    IGL65R110D2

    CoolGaN™ Transistor 650 V G5 The IGL65R11D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1304 kB
    Stron:
    20
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    IGL65R055D2

    CoolGaN™ Transistor 650 V G5 The IGL65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1302 kB
    Stron:
    20
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    IGLT65R055B2

    The IGLT65R055B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaN™ BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.
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    Infineon
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    1260 kB
    Stron:
    18
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    IGC090S20S1

    CoolGaN™ Transistor 200 V G3 in PQFN 3x5, 6.7 mΩ
    Producent:
    Infineon
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    1249 kB
    Stron:
    17
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    IGLT65R110B2

    The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.
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    Infineon
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    1203 kB
    Stron:
    18
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    IGD70R500D2S

    CoolGaN™ Transistor 700 V G5 The IGD70R500D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
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    1118 kB
    Stron:
    17
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    IGD70R140D2S

    CoolGaN™ Transistor 700 V G5 The IGD70R140D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
    Rozmiar:
    1117 kB
    Stron:
    17
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    IGD70R270D2S

    CoolGaN™ Transistor 700 V G5 The IGD70R270D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.
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    Infineon
    Rozmiar:
    1117 kB
    Stron:
    17
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    IGD70R200D2S

    CoolGaN™ Transistor 700 V G5 The IGD70R200D2S GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in the DPAK package, it is well-suited for consumer applications with slim form factors.
    Producent:
    Infineon
    Rozmiar:
    1117 kB
    Stron:
    17
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    GS-065-008-6-L-TR

    CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
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    Infineon
    Rozmiar:
    879 kB
    Stron:
    17