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BGSX33M5U16

3P3T MIPI 2.1 antenna cross switch The BGSX33M5U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This 3P3T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm

Producent:: Infineon
Rozmiar:: 1185 kB
Stron:: 25

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BGSX24M2U16

DP4T MIPI 2.1 antenna cross switch The BGSX24M2U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This Dual Pole Four Throw (DP4T) cross-switch offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE control interface. The on-chip controller permits very low power-supply voltage from 1.1 to 1.3 V or the standard supply voltage from 1.65 to 1.95V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if

Producent:: Infineon
Rozmiar:: 834 kB
Stron:: 22

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BGSX44MU18

4P4T MIPI 0.4 – 7.125 GHz antenna cross switch The BGSX44MU18 RF CMOS switch is specifically designed for LTE and 5G FR1 four-antenna applications. This 4P4T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports.Unlike GaAs technology, external DC blocking capacitors at the RF ports a

Producent:: Infineon
Rozmiar:: 781 kB
Stron:: 23

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DC Blocking Capacitors

Surface-Mount Multilayer Ceramic Chip Capacitors DC Blocking Capacitors

Producent:: Vishay
Rozmiar:: 135 kB
Stron:: 6