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    2EDF5215G

    Fast, robust, dual-channel, high side isolated gate driver with accurate and stable timing and high current output Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.
    Producent:
    Infineon
    Rozmiar:
    1865 kB
    Stron:
    30