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    IGT65R140D2

    CoolGaN™ Transistor 650 V G5 The IGT65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various consumer and industrial applications.
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    Infineon
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    1482 kB
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    18
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    IGLT65R110D2

    CoolGaN™ Transistor 650 V G5 The IGLT65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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    Infineon
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    1346 kB
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    17
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    IPTC034N15NM6

    OptiMOS™ 6 power MOSFET 150 V normal level in TOLT package for top-side cooling IPTC034N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. Combined with TOLT package, it enables top-side cooling for superior thermal performance, dissipating up to 95% of the heat through the heatsink and a
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    Infineon
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    1239 kB
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    13
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    IGLD65R140D2

    CoolGaN™ Transistor 650 V G5 The IGLD65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
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    Infineon
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    1227 kB
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    17
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    IGLD65R110D2

    CoolGaN™ Transistor 650 V G5 The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
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    Infineon
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    1226 kB
    Stron:
    17
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    IQD063N15NM5SC

    OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD063N15NM5SC comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
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    Infineon
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    1079 kB
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    12
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    IQDH45N04LM6SC

    OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQDH45N04LM6SC comes with a low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
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    Infineon
    Rozmiar:
    1007 kB
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    13
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    IQD005N04NM6SC

    OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQD005N04NM6SC comes with a low RDS(on) of 0,47 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1006 kB
    Stron:
    13
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    IQD020N10NM5CGSC

    OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD020N10NM5CGSC comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large varie
    Producent:
    Infineon
    Rozmiar:
    1003 kB
    Stron:
    12
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    IQDH45N04LM6CGSC

    OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQDH45N04LM6CGSC comes with a low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end
    Producent:
    Infineon
    Rozmiar:
    1003 kB
    Stron:
    12
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    IQD016N08NM5CGSC

    OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQD016N08NM5CGSC comes with a low RDS(on) of 1,57 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end
    Producent:
    Infineon
    Rozmiar:
    1003 kB
    Stron:
    12
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    IQD020N10NM5SC

    OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD020N10NM5SC comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1002 kB
    Stron:
    12
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    IQDH88N06LM5CGSC

    OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQDH88N06LM5CGSC comes with a low RDS(on) of 0,86 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variet
    Producent:
    Infineon
    Rozmiar:
    1002 kB
    Stron:
    12
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    IQD016N08NM5SC

    OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQD016N08NM5SC comes with a low RDS(on) of 1,57 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1001 kB
    Stron:
    12
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    IQDH29NE2LM5CGSC

    OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQDH29NE2LM5CGSC comes with industry’s lowest RDS(on) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQD005N04NM6CGSC

    OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQD005N04NM6CGSC comes with a low RDS(on) of 0,47 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large v
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQD009N06NM5SC

    OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD009N06NM5SC comes with a low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQDH88N06LM5SC

    OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQDH88N06LM5SC comes with a low RDS(on) of 0,86 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQD009N06NM5CGSC

    OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD009N06NM5CGSC comes with a low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQDH35N03LM5SC

    OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQDH35N03LM5SC comes with a low RDS(on) of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQDH35N03LM5CGSC

    OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQDH35N03LM5CGSC comes with a low RDS(on) of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variet
    Producent:
    Infineon
    Rozmiar:
    999 kB
    Stron:
    12
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    IQDH29NE2LM5SC

    OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on) The power MOSFET IQDH29NE2LM5SC comes with industry’s lowest RDS(ON) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    999 kB
    Stron:
    12
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    IQD063N15NM5CGSC

    OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD063N15NM5CGSC comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large varie
    Producent:
    Infineon
    Rozmiar:
    853 kB
    Stron:
    12
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    PLZ Series

    Zener Diodes Permitting 500 mW Power Dissipation
    Producent:
    Vishay
    Rozmiar:
    183 kB
    Stron:
    9
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    561R and 564R Series

    Lower Voltage Ceramic Singlelayer DC Disc Capacitors 1 kVDC to 3 kVDC Low Dissipation Factor
    Producent:
    Vishay
    Rozmiar:
    101 kB
    Stron:
    7