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    IQE220N15NM5SC

    OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down DSC package The IQE220N15NM5SC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than to the overmolded package. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized fo
    Producent:
    Infineon
    Rozmiar:
    1384 kB
    Stron:
    11
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    IQE008N03LM5SC

    HSC 8:1 500 W module solution for data center 48 V application. The IQE008N03LM5SC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside the components. It offers increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than the overmolded package, and is available in Standard and Center-Gate footprints.
    Producent:
    Infineon
    Rozmiar:
    1370 kB
    Stron:
    11
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    IQE220N15NM5CGSC

    OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package The IQE220N15NM5CGSC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than to the overmolded package. The new technology can be found in two different footprints Standard-Gate and Center-Gate
    Producent:
    Infineon
    Rozmiar:
    1304 kB
    Stron:
    11
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    IQE008N03LM5CGSC

    2.7 kW 80 plus titanium server power supply The IQE008N03LM5CGSC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside the components. It offers increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than the overmolded package, and is available in Standard and Center-Gate footprints.
    Producent:
    Infineon
    Rozmiar:
    1281 kB
    Stron:
    11