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RZ/N2L

Integrated TSN-Compliant 3-Port Gigabit Ethernet Switch Enables Various Industrial Applications to Easily Implement Industrial Ethernet and TSN

Producent:: Renesas Electronics
Rozmiar:: 1658 kB
Stron:: 127

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IMSQ120R053M2HH

CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s

Producent:: Infineon
Rozmiar:: 1359 kB
Stron:: 17

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IMSQ120R012M2HH

CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s

Producent:: Infineon
Rozmiar:: 1338 kB
Stron:: 17

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IMCQ120R034M2H

CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.

Producent:: Infineon
Rozmiar:: 1331 kB
Stron:: 18

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IMSQ120R040M2HH

CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s

Producent:: Infineon
Rozmiar:: 1323 kB
Stron:: 17

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IMSQ120R026M2HH

CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s

Producent:: Infineon
Rozmiar:: 1317 kB
Stron:: 17

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IMCQ120R005M2H

CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 5 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.

Producent:: Infineon
Rozmiar:: 1310 kB
Stron:: 18

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IMCQ120R004M2H

CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 4 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.

Producent:: Infineon
Rozmiar:: 1305 kB
Stron:: 18

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IMCQ120R078M2H

CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.