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    IM67D128B

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM67D128B – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life and environmental robustness in an exceptionally small package. With a Signal-to-noise ratio (SNR) of 67dB(A) and low corner frequency of 10Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM67D128B balances performance in a ver
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    Infineon
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    2219 kB
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    IM68D128B

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM68D128B – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life and environmental robustness in a small package. With a Signal-to-noise ratio (SNR) of 67.5dB(A) and low corner frequency of 20Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM68D128B balances performance in a small package at
    Producent:
    Infineon
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    2121 kB
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    20
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    IM66D130M

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM66D130M – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life, very high AOP and environmental robustness in a small package. With a Signal-to-noise ratio (SNR) of 66dB(A) and low corner frequency of 35Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM66D130M balances performance in a sma
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    Infineon
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    1952 kB
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    AIMBG75R027M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more densi
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    Infineon
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    1828 kB
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    AIMBG75R060M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more densi
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    Infineon
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    1793 kB
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    AIMBG75R090M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more densi
    Producent:
    Infineon
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    1743 kB
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    15
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    AIMBG75R007M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 7 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
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    1614 kB
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    18
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    AIMBG75R025M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 25 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
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    1609 kB
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    18
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    AIMDQ75R020M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more densi
    Producent:
    Infineon
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    1467 kB
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    15
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    AIMDQ75R027M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more densi
    Producent:
    Infineon
    Rozmiar:
    1460 kB
    Stron:
    15
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    AIMDQ75R090M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more densi
    Producent:
    Infineon
    Rozmiar:
    1428 kB
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    15
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    AIMDQ75R060M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more densi
    Producent:
    Infineon
    Rozmiar:
    1426 kB
    Stron:
    15
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    IMBG75R007M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1422 kB
    Stron:
    18
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    IMBG75R025M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1418 kB
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    18
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    AIMBG75R060M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 60 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
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    1388 kB
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    AIMBG75R033M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 33 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
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    1384 kB
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    18
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    AIMBG75R050M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 50 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1383 kB
    Stron:
    18
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    AIMBG75R040M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 40 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1381 kB
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    18
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    IMBG75R060M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1196 kB
    Stron:
    18
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    IMBG75R033M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1193 kB
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    18
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    IMBG75R050M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1191 kB
    Stron:
    18
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    IMBG75R040M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1190 kB
    Stron:
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    AIMZA75R008M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
    Producent:
    Infineon
    Rozmiar:
    1186 kB
    Stron:
    16
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    IM66D132H

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM66D132H – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life, high sensitivity and environmental robustness in a small package. With a Signal-to-noise ratio (SNR) of 66.5dB(A) and low corner frequency of 20Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM66D132H balances performance in
    Producent:
    Infineon
    Rozmiar:
    950 kB
    Stron:
    22
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    IM68D121J

    Ultra-low power digital PDM XENSIV™ MEMS microphone Discover the IM68D121J – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require long battery life, very high AOP and environmental robustness in a small package. With a Signal-to-noise ratio (SNR) of 68dB(A) and low corner frequency of 20Hz the microphone enables a clear audio experience without compromising on battery life. Enabled by a revolutionary digital microphone ASIC, the IM68D121J balances performance in a sma
    Producent:
    Infineon
    Rozmiar:
    712 kB
    Stron:
    22