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    370181073P

    Samochód RC dla początkujących Carrera First, 1:18, Elektryczny, RtR
    Producent:
    Carrera
    Rozmiar:
    2933 kB
    Stron:
    1
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    IAUCN10S7N021

    100 V, N-Ch, 2.1 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 100V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN10S7N021 is a true step forward in the category of power density.
    Producent:
    Infineon
    Rozmiar:
    2429 kB
    Stron:
    12
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    XDP700-002

    XDP700-002 is industry’s first -48V wide input voltage hot-swap controller with a programmable digital SOA control ideal for Telecom infrastructure XDP700-002 is a new member of Infineon Technologies intelligent hot-swap controller and protection IC family able to drive a single or multiple parallel N-channel MOSFETs. Key resource of XDP700-002 include high-precision AFE, extensive variety of system warnings and protections, high-speed communiction via PMBus to main CPU, reset, shutdown, retry and digital
    Producent:
    Infineon
    Rozmiar:
    2006 kB
    Stron:
    89
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    CYRS17B01G-133UZMB

    Infineon offers the space industry’s first QML qualified, radiation hardened by design, quad SPI (QSPI) NOR Flash. Infineon has expanded its line of radiation hardened NOR flash memory products, which offer the best combination of performance, density, and resistance to radiation and single event effects (SEE). Ideal for storing boot code and configuration images for space FPGAs.
    Producent:
    Infineon
    Rozmiar:
    1728 kB
    Stron:
    139
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    KP467

    XENSIV™ - KP467 first autonomous air pressure sensor to permanently monitor and detect thermal runaway events in battery electric vehicles A modern battery electric vehicle is constantly monitored by a large number of sensors and intelligent microcontrollers while driving. In parking mode, these battery functions are disabled. KP467 is the first pressure sensor for battery management systems that monitors and provides a warning in case of a thermal runaway event with highest efficiently, immediate response
    Producent:
    Infineon
    Rozmiar:
    1482 kB
    Stron:
    48
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    R5F51406ADFN#10

    RX100 Series' First RXv2 Core 32-bit Microcontrollers with Third-Generation Touch IP for Even Lower Power Consumption
    Producent:
    Renesas Electronics
    Rozmiar:
    1471 kB
    Stron:
    121
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    OC1230

    World’s tiniest GSMA-compliant and world’s first 28 nm eSIM solution optimized for mobile consumer devices OPTIGA™ Connect Consumer OC1230 comes with a rich feature set optimized for mobile consumer devices, making it the perfect fit for even the tiniest mobile consumer devices like smart watches and other wearables. The security architecture is based on the Arm® v8 and Infineon’s Integrity Guard 32 technology for increased performance and less power consumption. RSP and MEP compliant with GSMA SGP.22 v3 g
    Producent:
    Infineon
    Rozmiar:
    1325 kB
    Stron:
    55
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    5962F2122202VYC

    Infineon offers the space industry’s first DLAM QML-V qualified, radiation hardened by design, quad SPI (QSPI) NOR Flash. Our rad hard NOR flash, is the first in its family from Infineon, offering the highest performance, density, radiation, and single event effects (SEE) performance combination for space FPGA boot code and configuration image storage solutions for satellites.
    Producent:
    Infineon
    Rozmiar:
    1303 kB
    Stron:
    134
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    IQE004NE1LM7SC

    OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down with dual-side cooling IQE004NE1LM7SC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The dual-side cooling feature boosts thermal management capabilities, pushing power density and efficiency to the next level in High Power SMPS applications.
    Producent:
    Infineon
    Rozmiar:
    1291 kB
    Stron:
    11
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    ISK018NE1LM7

    OptiMOS™ 7 power MOSFET 15 V in PQFN 2x2 ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low RDS(on) of 2.15 mOhm while offering a pulsed current capability of more than 500 A, with a typical thermal resistance junction to case-bottom (RthJC) of 1.6 K/W. The small 4 mm2 footprint package enables significant space saving with PCB layout flexibility while having form factor improvement.
    Producent:
    Infineon
    Rozmiar:
    1260 kB
    Stron:
    11
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    IQE004NE1LM7CGSC

    OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate with dual-side cooling IQE004NE1LM7CGSC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The Center-Gate footprint is optimized parallelization. The dual-side cooling feature boosts thermal management capabilities, pushing power density and efficiency to the next level in High Powe
    Producent:
    Infineon
    Rozmiar:
    1210 kB
    Stron:
    11
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    IDWD10G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1119 kB
    Stron:
    10
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    IDWD80G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 80 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1079 kB
    Stron:
    10
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    IDYH10G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247PLUS-4 HCC package CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is
    Producent:
    Infineon
    Rozmiar:
    1074 kB
    Stron:
    10
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    IQE004NE1LM7CG

    OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate IQE004NE1LM7CG is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The Center-Gate footprint is optimized for parallelization. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications
    Producent:
    Infineon
    Rozmiar:
    1050 kB
    Stron:
    11
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    IDWD25G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1033 kB
    Stron:
    10
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    IDWD40G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 40 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1021 kB
    Stron:
    10
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    IQE004NE1LM7

    OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down IQE004NE1LM7 is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications.
    Producent:
    Infineon
    Rozmiar:
    1015 kB
    Stron:
    11
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    IDWD50G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 50 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    976 kB
    Stron:
    10
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    20063048

    Zestaw torów wyścigowych Carrera First Batwheels gotowe do użycia 20063048
    Producent:
    Carrera
    Rozmiar:
    723 kB
    Stron:
    1
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    IAUCN08S7N013

    80 V, N-Ch, 1.3 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN08S7N013 is a true step forward in the area of power density.
    Producent:
    Infineon
    Rozmiar:
    704 kB
    Stron:
    12
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    ADSP-21MOD870

    16-Bit, First Complete Digital Modem on a Single Chip
    Producent:
    Analog Devices
    Rozmiar:
    231 kB
    Stron:
    32
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    MAX13448E

    MAX13448E Industry's First &#17780V Fault-Protected, Full-Duplex RS-485 Transceiver
    Producent:
    Maxim Integrated
    Rozmiar:
    192 kB
    Stron:
    14
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    ADSP-21MOD870

    16-Bit, First Complete Digital Modem on a Single Chip
    Producent:
    Analog Devices
    Rozmiar:
    61 kB
    Stron:
    6