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    AIMZH120R010M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1689 kB
    Stron:
    16
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    AIMZH120R160M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1670 kB
    Stron:
    16
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    AIMZHN120R010M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1651 kB
    Stron:
    16
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    AIMZH120R080M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1643 kB
    Stron:
    16
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    AIMZH120R030M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1642 kB
    Stron:
    16
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    AIMZH120R040M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1641 kB
    Stron:
    16
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    AIMZH120R120M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1634 kB
    Stron:
    16
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    AIMZHN120R160M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1632 kB
    Stron:
    16
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    AIMZH120R060M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1626 kB
    Stron:
    16
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    AIMZHN120R020M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1608 kB
    Stron:
    16
  11. Podgląd PDFa
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    AIMZHN120R080M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1605 kB
    Stron:
    16
  12. Podgląd PDFa
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    AIMZHN120R030M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1603 kB
    Stron:
    16
  13. Podgląd PDFa
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    AIMZHN120R040M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1603 kB
    Stron:
    16
  14. Podgląd PDFa
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    AIMZHN120R120M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1595 kB
    Stron:
    16
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    AIMZHN120R060M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
    Producent:
    Infineon
    Rozmiar:
    1588 kB
    Stron:
    16
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    AIMCQ120R040M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1585 kB
    Stron:
    16
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    AIMCQ120R060M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1559 kB
    Stron:
    16
  18. Podgląd PDFa
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    AIMCQ120R080M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1551 kB
    Stron:
    16
  19. Podgląd PDFa
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    AIMCQ120R030M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1548 kB
    Stron:
    16
  20. Podgląd PDFa
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    AIMCQ120R120M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1538 kB
    Stron:
    16
  21. Podgląd PDFa
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    AIMCQ120R020M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1537 kB
    Stron:
    16
  22. Podgląd PDFa
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    AIMCQ120R160M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1537 kB
    Stron:
    16
  23. Podgląd PDFa
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    RL78/G1P

    Small Pin General-purpose Microcontroller with 12-bit A/D Converter and 10-bit D/A Converter
    Producent:
    Renesas Electronics
    Rozmiar:
    584 kB
    Stron:
    42
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    1041740

    Adapter montażowy Phoenix Contact NBC-PP-G1PGY 1041740, 1 szt.
    Producent:
    Phoenix Contact
    Rozmiar:
    129 kB
    Stron:
    9
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    2200485

    Phoenix Contact 2200485 Obudowa złącza pin męskiego na PCB MSTBO 2,5/ 4-G1PL BK, piny: 4, 12 A, 50 szt.
    Producent:
    Phoenix Contact
    Rozmiar:
    64 kB
    Stron:
    4