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    GS66508B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66508B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508B-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    1008 kB
    Stron:
    20