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    BGMC1210

    BGMC1210 Bias & Control Chips The BGMC1210 is a bias and control IC for Power Amplifiers (PA). The device is optimized for Doherty PAs and biases up to 2 PAs with 4 DAC outputs per PA but can be used in any PA configuration. The DACs have a resolution of 12 Bit and a current driving capability of 50 mA sourcing and 20 mA sinking. The DACs are organized in two groups with independent supplies and can be operated with positive and negative supply voltages in order to bias LDMOS and GaN transistors. In ad
    Producent:
    Infineon
    Rozmiar:
    3812 kB
    Stron:
    90
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    TLE5555ICB-E4B-TOP

    XENSIV™ - TLE5555ICB E4B-TOP with sintered ferrite back-bias magnet, a new era of TMR transmission speed sensors At the forefront of technological advancements, TMR speed sensors have emerged as the superior choice over the traditional Hall sensors. This new generation of sensors revolutionizes speed sensing applications, offering unparalleled performance, reliability, and efficiency, thus ensuring optimal results in any environment. Say goodbye to limitations and unlock a new level of efficiency and produ
    Producent:
    Infineon
    Rozmiar:
    2783 kB
    Stron:
    14
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    TLE5555IC-ME-E4B

    XENSIV™ – TLE5555IC ME E4B, a new era of TMR transmission speed sensors At the forefront of technological advancements, TMR speed sensors have emerged as the superior choice over the traditional Hall sensors. This new generation of sensors revolutionizes speed sensing applications, offering unparalleled performance, reliability, and efficiency, thus ensuring optimal results in any environment. Say goodbye to limitations and unlock a new level of efficiency and productivity in your systems.
    Producent:
    Infineon
    Rozmiar:
    2663 kB
    Stron:
    13
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    2EDL8023G3C

    120 V high side and low side 2EDL8023G3C EiceDRIVER™ 2EDL8023G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8023G3C takes in independent inputs with built-in hysteresis for enhanced noise immunity. 2EDL8023G3C have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching <6 ns that ensures volt-second balance and avoids magnetic core saturation. The driver comes in small 3x3
    Producent:
    Infineon
    Rozmiar:
    2097 kB
    Stron:
    27
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    ISC012N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in SuperSO8 5x6 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 1.2 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC012N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    1489 kB
    Stron:
    14
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    ISC015N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in SuperSO8 5x6 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 1.5 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC015N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    1487 kB
    Stron:
    14
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    ISC052N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in SuperSO8 5x6 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 5.2 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC052N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    1443 kB
    Stron:
    14
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    ISC033N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in SuperSO8 5x6 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC033N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    1443 kB
    Stron:
    14
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    ISC028N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in SuperSO8 5x6 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 2.8 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC028N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    1441 kB
    Stron:
    14
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    ISC023N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in SuperSO8 5x6 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 2.3 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC023N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    1439 kB
    Stron:
    14
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    ISC009N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in SuperSO8 5x6 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 0.9 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC009N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    1265 kB
    Stron:
    14
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    ISK018NE1LM7

    OptiMOS™ 7 power MOSFET 15 V in PQFN 2x2 ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low RDS(on) of 2.15 mOhm while offering a pulsed current capability of more than 500 A, with a typical thermal resistance junction to case-bottom (RthJC) of 1.6 K/W. The small 4 mm2 footprint package enables significant space saving with PCB layout flexibility while having form factor improvement.
    Producent:
    Infineon
    Rozmiar:
    1260 kB
    Stron:
    11
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    IRHNS57Z60SCS

    IRHNS57Z60SCS is a rad hard single N-channel MOSFET with 30V, 75A ratings in a SupIR-SMD package. These R5 MOSFETs deliver electrical performance up to 100krad(Si) TID with QIRL classification and are perfect for space applications. They have low RDS(on) and low gate charge, making them ideal for DC-DC converters and motor control, and retain all the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1105 kB
    Stron:
    9
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    JANSR2N7588T3

    The JANSR2N7588T3 N-channel MOSFET provides a reliable solution for space applications. With a voltage rating of 100V and current rating of 20A, these rad hard R6 MOSFETs have been characterized for Total Dose and Single Event Effects. Their low RDS(on) and gate charge minimize power losses in switching applications, and they offer voltage control and fast switching.
    Producent:
    Infineon
    Rozmiar:
    1073 kB
    Stron:
    14
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    IPB023N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in D²PAK Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a RDS(on) of 2.3 mOhm in a D²PAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPB023N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    882 kB
    Stron:
    12
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    IPB018N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in D²PAK Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a RDS(on) of 1.8 mOhm in a D²PAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPB018N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    881 kB
    Stron:
    12
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    IPB020N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in D²PAK Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a RDS(on) of 2.0 mOhm in a D²PAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPB020N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    880 kB
    Stron:
    12
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    IRHMS57Z60SCS

    IRHMS57Z60SCS, a rad hard, 30V, 45A N-channel MOSFET in a TO-254AA low ohmic package is ideal for space applications. These R5 MOSFETs have low RDS(on) and gate charge, which reduces power losses in switching applications like DC-DC converters and motor controllers. With voltage control, fast switching, and temperature stability, they retain the benefits of traditional MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    843 kB
    Stron:
    13
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    JANTXVR2N7261U

    JANTXVR2N7261U is a high performance rad hard N-channel MOSFET designed for space applications with 100V and 8A rating. With electrical performance up to 500krad(Si) TID and packaged in an 18-pin LCC, these devices have demonstrated decades of reliability in satellite bus and payload applications. The low RDS(on) and low gate charge result in reduced power losses while providing the well-established advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    732 kB
    Stron:
    13
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    CYPD3176-24LQXQT

    EZ-PD™ Barrel Connector Replacement Plus (BCR-Plus) in tape and reel package EZ-PD™ Barrel Connector Replacement-Plus (BCR-Plus) CYPD3176-24LQXQT is the tape and reel packing option of the EZ-PD™ BCR-Plus family of highly-integrated pre-programmed USB-C port controllers for power sink applications. It has the ability to support ports with or without USB data capability, and it mainly targets electronic devices that have legacy barrel connectors (up to 100W) or USB micro-B connectors for power such as drone
    Producent:
    Infineon
    Rozmiar:
    359 kB
    Stron:
    35
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    CYPD3178-24LQXQT

    EZ-PD™ Barrel Connector Replacement Lite (BCR-Lite) in tape and reel package EZ-PD™ BCR-LITE CYPD3178-24LQXQT is the tape and reel packing option of the EZ-PD™ BCR-Lite family and is a highly-integrated pre-programmed USB-C sink port controller with the ability to support ports with or without USB data capability. It mainly targets electronic devices that have legacy barrel connectors or USB micro-B connectors for power such as drones, smart speakers, power tools, and other rechargeable devices. EZ-PD™ BCR
    Producent:
    Infineon
    Rozmiar:
    307 kB
    Stron:
    32
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    IRHN7450SESCS

    IRHN7450SESCS R4 MOSFET is a single radiation-hardened N-channel device in a SMD-1 package, with 500V, 12A ratings. It is ideal for space applications, with electrical performance up to 100krad(Si) TID and QIRL classification. These devices have low RDS(on) and gate charge, reducing power loss in DC-DC converters and motor control. They offer voltage control, fast switching, and temperature stability of electrical parameters.
    Producent:
    Infineon
    Rozmiar:
    250 kB
    Stron:
    8
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    CY7C1019DV33-10VXM

    Our asynchronous fast SRAMs are industry’s fastest parallel asynchronous SRAM solutions with fastest access time of 10 ns. Industry’s broadest portfolio of low-power, high-speed SRAM with on-chip ECC to suit defense applications. Highly reliable the SRAMs have a < 0.1 FIT/Mbit and a long-term support commitment. Asynchronous SRAMs are used as expansion memory for cache and buffer memory applications.
    Producent:
    Infineon
    Rozmiar:
    221 kB
    Stron:
    24
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    IRHMK597160SCS

    IRHMK597160SCS is a R5, rad hard, -100V, -45A, single, P-channel MOSFET in a TO-254AA Tabless SMD package. With electrical performance up to 100krad(Si) TID and QIRL classification, these MOSFETs reduce power loss in switching applications and have been characterized for Total Dose and Single Event Effect (SEE) up to LET of 80 (MeV/(mg/cm2)). With low RDS(on) and low gate charge, they retain all advantages of MOSFETs for space applications.
    Producent:
    Infineon
    Rozmiar:
    176 kB
    Stron:
    8
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    FAN6250

    Secondary Side Synchronous Rectifier Controller for Flyback Converters Having Proprietary DRE Function While with FAN1080
    Producent:
    onsemi
    Rozmiar:
    156 kB
    Stron:
    9