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    IRHNJ597130SCVA

    IRHNJ597130SCVA P-channel MOSFET is rad hard, with -100V and -12.5A, in a single SMD-0.5 package with lead attached. It has electrical performance up to 100krad(Si) TID and QIRL classification. IR HiRel R5 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
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    Infineon
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    2184 kB
    Stron:
    8
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    JANSR2N7550U2S

    JANSR2N7550U2S P-channel MOSFET is rad hard, with -100V and -47A, in a single SMD-2 package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R5 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1306 kB
    Stron:
    8
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    JANSR2N7550U2A

    JANSR2N7550U2A P-channel MOSFET is rad hard, with -30V and -56A, in a single SMD-2 package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R5 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1300 kB
    Stron:
    8
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    JANSR2N7550T1

    JANSR2N7550T1 P-channel MOSFET is rad hard, with -100V and -45A, in a single TO-254AA low ohmic package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R5 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1233 kB
    Stron:
    8
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    JANTXVF2N7389

    JANTXVF2N7389 P-channel MOSFET is rad hard, with -100V and -6.5A, in a single TO-205AF package. It has electrical performance up to 300krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1206 kB
    Stron:
    8
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    JANSR2N7549U2A

    JANSR2N7549U2A P-channel MOSFET is rad hard, with -200V and -33.5A capacity, in a single SupIR-SMD package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R5 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1143 kB
    Stron:
    8
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    IRHLNJ797034SCSA

    IRHLNJ797034SCSA P-channel MOSFET is rad hard, with -60V and -22A, in a single SMD-0.5 package with lead attached. It has electrical performance up to 100krad(Si) TID and QIRL classification. IR HiRel R7 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1134 kB
    Stron:
    9
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    JANSR2N7659T3

    JANSR2N7659T3 P-channel MOSFET is rad hard, with -60V and -30A, in a single TO-257AA low ohmic package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1110 kB
    Stron:
    15
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    JANSR2N7625T3

    JANSR2N7625T3 P-channel MOSFET is rad hard, with -60V and -45A, in a single TO-257AA low ohmic package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R7 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1090 kB
    Stron:
    9
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    JANTXVR2N7426U

    JANTXVR2N7426U P-channel MOSFET is rad hard, with -200V and -29A, in a single SMD-2 package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1069 kB
    Stron:
    13
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    JANTXVR2N7422U

    JANTXVR2N7422U P-channel MOSFET is rad hard, with -100V and -22A, in a single SMD-1 package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    1016 kB
    Stron:
    13
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    JANTXVR2N7389U

    JANTXVR2N7389U P-channel MOSFET is rad hard, with -100V and -6.5A, in a single 18-pin LCC package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    994 kB
    Stron:
    8
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    JANTXVR2N7382

    JANTXVR2N7382 P-channel MOSFET is rad hard, with -100V and -1.1A, in a single TO-257AA package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    952 kB
    Stron:
    8
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    JANTXVF2N7425U

    JANTXVF2N7425U P-channel MOSFET is rad hard, with -100V and -38A, in a single SMD-2 package. It has electrical performance up to 300krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    941 kB
    Stron:
    13
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    JANSR2N7626UBN

    JANSR2N7626UBN P-channel MOSFET is rad hard, with -60V and -0.53A, in a single UB package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R7 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    903 kB
    Stron:
    16
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    JANTXVR2N7426

    JANTXVR2N7426 P-channel MOSFET is rad hard, with -200V and -27A, in a single TO-254AA package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    902 kB
    Stron:
    8
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    JANTXVR2N7390

    JANTXVR2N7390 P-channel MOSFET is rad hard, with -200V and -4A, in a single TO-205AF package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    861 kB
    Stron:
    8
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    IRHYS9A97230CM

    IRHYS9A97230CM P-channel MOSFET is rad hard, with -200V and -14A, in a singleTO-257AA low ohmic package with electrical performance up to 100krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    812 kB
    Stron:
    15
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    JANTXVR2N7424U

    JANTXVR2N7424U P-channel MOSFET is rad hard, with -60V and -48A, in a single SMD-2 package. It has electrical performance up to 100krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    810 kB
    Stron:
    13
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    025844

    Urządzenie rozruchowe GYS Gyspack Heritage, 450 A, 40 Ah
    Producent:
    GYS
    Rozmiar:
    699 kB
    Stron:
    1
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    JANTXVF2N7425

    JANTXVF2N7425 P-channel MOSFET is rad hard, with -100V and -35A, in a single TO-254AA package. It has electrical performance up to 300krad(Si) TID and QPL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    683 kB
    Stron:
    8
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    JANSR2N7660U3CE

    JANSR2N7660U3CE P-channel MOSFET is rad hard, with -100V and -24A, in a single SMD-0.5e Ceramic Lid package. It is QPL classified and has electrical performance up to 100krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    563 kB
    Stron:
    14
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    IRHNS9A97160

    IRHNS9A97160 P-channel MOSFET is rad hard, with -100V and -91A, in a single SupIR-SMD package with electrical performance up to 100krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    505 kB
    Stron:
    14
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    IRH9150SCV

    IRH9150SCV P-channel MOSFET is rad hard, with -100V and -22A, in a single TO-204AE package. It has electrical performance up to 100krad(Si) TID and QIRL classification. IR HiRel R4 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    350 kB
    Stron:
    8
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    IRHNJ597034SCVA

    IRHNJ597034SCVA P-channel MOSFET is rad hard, with -60V and -22A, in a single SMD-0.5 package with lead attached. It has electrical performance up to 100krad(Si) TID and QIRL classification. IR HiRel R5 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
    Producent:
    Infineon
    Rozmiar:
    206 kB
    Stron:
    8