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    IGLD65R080D2

    CoolGaN™ Transistor 650 V G5 The IGLD65R080D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
    Producent:
    Infineon
    Rozmiar:
    1228 kB
    Stron:
    17