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    IGLT65R110B2

    The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.
    Producent:
    Infineon
    Rozmiar:
    1203 kB
    Stron:
    18