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    IGOT60R042D1

    600 V CoolGaN™ e-mode power transistor for high power applications in top side cooled power package The IGOT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the leaded SMD DSO-20-87 package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables, and numerous other applications.
    Producent:
    Infineon
    Rozmiar:
    631 kB
    Stron:
    16