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    IMDQ75R016M1H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop desig
    Producent:
    Infineon
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    1356 kB
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    15
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    IMDQ75R040M1H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop desig
    Producent:
    Infineon
    Rozmiar:
    1312 kB
    Stron:
    15
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    IMDQ75R020M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop
    Producent:
    Infineon
    Rozmiar:
    1306 kB
    Stron:
    15
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    IMDQ75R027M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop
    Producent:
    Infineon
    Rozmiar:
    1296 kB
    Stron:
    15
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    IMDQ75R140M1H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop desig
    Producent:
    Infineon
    Rozmiar:
    1267 kB
    Stron:
    15
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    IMDQ75R090M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop
    Producent:
    Infineon
    Rozmiar:
    1266 kB
    Stron:
    15
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    IMDQ75R025M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1252 kB
    Stron:
    20
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    IMDQ75R016M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1252 kB
    Stron:
    20
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    IMDQ75R007M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 7 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 7 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers
    Producent:
    Infineon
    Rozmiar:
    1251 kB
    Stron:
    20
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    IMDQ65R010M2H

    CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 10 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
    Producent:
    Infineon
    Rozmiar:
    1225 kB
    Stron:
    18
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    IMDQ65R007M2H

    CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 7 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
    Producent:
    Infineon
    Rozmiar:
    1223 kB
    Stron:
    18
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    IMDQ65R015M2H

    CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 15 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
    Producent:
    Infineon
    Rozmiar:
    1222 kB
    Stron:
    18
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    IMDQ65R020M2H

    CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 20 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    18
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    IMDQ75R060M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop
    Producent:
    Infineon
    Rozmiar:
    1220 kB
    Stron:
    15
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    IMDQ75R004M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 4 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 4 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers
    Producent:
    Infineon
    Rozmiar:
    1219 kB
    Stron:
    19
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    IMDQ75R060M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1214 kB
    Stron:
    20
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    IMDQ75R033M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 33 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1209 kB
    Stron:
    20
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    IMDQ75R050M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 50 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
    Producent:
    Infineon
    Rozmiar:
    1209 kB
    Stron:
    20
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    IMDQ75R040M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 40 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1205 kB
    Stron:
    20
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    IMD10A

    Dual Die part consisting of a 100mA NBRT and 500mA PBRT
    Producent:
    onsemi
    Rozmiar:
    173 kB
    Stron:
    6
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    IMDIFL12

    Kontroler izolacji Schneider Electric
    Producent:
    Schneider Electric
    Rozmiar:
    134 kB
    Stron:
    2
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    IMD-IM20

    Kontroler izolacji Schneider Electric IMD-IM20
    Producent:
    Schneider Electric
    Rozmiar:
    132 kB
    Stron:
    2
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    IMD-IM9

    Kontroler izolacji Schneider Electric IMD-IM9
    Producent:
    Schneider Electric
    Rozmiar:
    128 kB
    Stron:
    2
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    IMD-IM10

    Kontroler izolacji Schneider Electric IMD-IM10
    Producent:
    Schneider Electric
    Rozmiar:
    128 kB
    Stron:
    2
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    IMD10A

    Dual Die part consisting of a 100mA NBRT and 500mA PBRT
    Producent:
    ON Semiconductor
    Rozmiar:
    92 kB
    Stron:
    1