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    IMLT40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
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    1304 kB
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    18
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    IMLT40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1301 kB
    Stron:
    18
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    IMLT40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1299 kB
    Stron:
    18
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    IMLT40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1299 kB
    Stron:
    18
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    IMLT40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1298 kB
    Stron:
    18
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    IMLT65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 in TOLT utilizes the CoolSiC™ Generation 2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ TOLT and CoolMOS™ Q-DPAK, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
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    Infineon
    Rozmiar:
    1197 kB
    Stron:
    19
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    IMLT65R026M2H

    The CoolSiC™ MOSFET 650 V in TOLT combines the best performance of CoolSiC™ G2 with top-side cooling to achieve the highest system power density. The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top-side cooling solution, obtaining better thermal performance, syst
    Producent:
    Infineon
    Rozmiar:
    1196 kB
    Stron:
    19
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    IMLT65R015M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1196 kB
    Stron:
    19
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    IMLT65R033M2H

    The CoolSiC™ MOSFET 650 V in TOLT combines the best performance of CoolSiC™ G2 with top-side cooling to achieve the highest system power density. The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top-side cooling solution, obtaining better thermal performance, syst
    Producent:
    Infineon
    Rozmiar:
    1194 kB
    Stron:
    19
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    IMLT65R020M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1193 kB
    Stron:
    19
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    IMLT65R060M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package, 60 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1192 kB
    Stron:
    19
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    IMLT65R040M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1191 kB
    Stron:
    19
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    IMLT65R050M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package, 50 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1189 kB
    Stron:
    19
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    IML3112

    I3C Basic 1:2 Multiplexer
    Producent:
    Renesas Electronics
    Rozmiar:
    157 kB
    Stron:
    2