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    IMZA120R040M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    1606 kB
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    IMZA120R017M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    1575 kB
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    IMZA120R022M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 22 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    1561 kB
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    IMZA120R078M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
    Rozmiar:
    1558 kB
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    18
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    IMZA120R026M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
    Rozmiar:
    1554 kB
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    18
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    IMZA120R053M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1554 kB
    Stron:
    18
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    IMZA120R012M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
    Rozmiar:
    1552 kB
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    18
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    IMZC120R040M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 40 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1488 kB
    Stron:
    18
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    IMZA120R034M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1477 kB
    Stron:
    18
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    IMZC120R022M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 22 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1443 kB
    Stron:
    18
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    IMZC120R078M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 78 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1440 kB
    Stron:
    18
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    IMZC120R026M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 26 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1436 kB
    Stron:
    18
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    IMZC120R053M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 53 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1436 kB
    Stron:
    18
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    IMZC140R038M2H

    CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 38 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app
    Producent:
    Infineon
    Rozmiar:
    1377 kB
    Stron:
    18
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    IMZC140R019M2H

    CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 19 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app
    Producent:
    Infineon
    Rozmiar:
    1373 kB
    Stron:
    18
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    IMZC120R034M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package The 1200 V, 34 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1359 kB
    Stron:
    18
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    IMZC140R024M2H

    CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 24 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app
    Producent:
    Infineon
    Rozmiar:
    1356 kB
    Stron:
    18
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    IMZC140R029M2H

    CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 29 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app
    Producent:
    Infineon
    Rozmiar:
    1354 kB
    Stron:
    18
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    IMZC140R011M2H

    CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 11 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app
    Producent:
    Infineon
    Rozmiar:
    1340 kB
    Stron:
    18
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    IMZA40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1228 kB
    Stron:
    17
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    IMZA40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1225 kB
    Stron:
    17
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    IMZA40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1224 kB
    Stron:
    17
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    IMZA40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1222 kB
    Stron:
    17
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    IMZA40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    17
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    IMZA65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    981 kB
    Stron:
    17