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    2EDL5023U2D

    120V HB 2EDL50X3U2D EiceDRIVER™ Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on.
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    ISC016N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
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    ISC012N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
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    ISC011N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting per
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    ISCH99N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
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    ISZ015N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in a PQFN 3.3 x 3.3 package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting
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    1265 kB
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    ISCH54N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
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    ISCH69N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    15