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    IAUCN04S7L025AH

    40 V, N-Ch, 2.56 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7 The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.
    Producent:
    Infineon
    Rozmiar:
    3910 kB
    Stron:
    16
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    IAUCN08S7N016T

    80 V, N-Ch, 1.63 mΩ max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS™ 7 IAUCN08S7N016T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3398 kB
    Stron:
    12
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    IAUCN08S7N019T

    80 V, N-Ch, 1.94 mΩ max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS™ 7 IAUCN08S7N019T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3314 kB
    Stron:
    12
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    IAUCN08S7N045T

    80 V, N-Ch, 4.54 mΩ max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS™ 7 IAUCN08S7N045T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3289 kB
    Stron:
    12
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    IAUCN08S7N024T

    80 V, N-Ch, 2.44 mΩ max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS™ 7 IAUCN08S7N024T is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80V. This product is offered in our innovative, top-side cooled SSO10T 5x7 mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3262 kB
    Stron:
    12
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    IAUCN04S7N006T

    40 V, N-Ch, 0.64mΩ max, Automotive MOSFET, SSO10T (5x7), OptiMOS™ 7 IAUCN04S7N006T is an automotive MOSFET built with Infineon's leading-edge, power semiconductor technology, OptiMOS™ 7 40V. Offered in our innovative, top-side cooled SSO10T 5x7 mm² SMD package, it significantly advances cooling, power density and system costs. It is designed for the high performance, quality and robustness required for automotive applications. The package is JEDEC listed, suitable for open market use and with second source
    Producent:
    Infineon
    Rozmiar:
    2762 kB
    Stron:
    12
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    IAUCN04S7N024H

    40 V, N-Ch, 2.46 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7 The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.
    Producent:
    Infineon
    Rozmiar:
    2435 kB
    Stron:
    12
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    IAUCN04S7L023H

    40 V, N-Ch, 2.34 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7 The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.
    Producent:
    Infineon
    Rozmiar:
    2425 kB
    Stron:
    12
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    IAUCN04S7N054H

    40 V, N-Ch, 5.41 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7 The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.
    Producent:
    Infineon
    Rozmiar:
    2419 kB
    Stron:
    12
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    IAUCN04S7L050H

    40 V, N-Ch, 5.04 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7 The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.
    Producent:
    Infineon
    Rozmiar:
    2416 kB
    Stron:
    12
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    IAUCN04S7N040H

    40 V, N-Ch, 4.01 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7 The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.
    Producent:
    Infineon
    Rozmiar:
    2416 kB
    Stron:
    12
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    IAUCN04S7L037H

    40 V, N-Ch, 3.78 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7 The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.
    Producent:
    Infineon
    Rozmiar:
    2414 kB
    Stron:
    12
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    AIMBG75R007M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 7 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1614 kB
    Stron:
    18
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    AIMBG75R025M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 25 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1609 kB
    Stron:
    18
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    IMBG75R007M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1422 kB
    Stron:
    18
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    IMBG75R025M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1418 kB
    Stron:
    18
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    AIMBG75R060M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 60 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1388 kB
    Stron:
    18
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    AIMBG75R033M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 33 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1384 kB
    Stron:
    18
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    AIMBG75R050M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 50 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1383 kB
    Stron:
    18
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    AIMBG75R040M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 40 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1381 kB
    Stron:
    18
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    IMBG75R060M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1196 kB
    Stron:
    18
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    IMBG75R033M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1193 kB
    Stron:
    18
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    IMBG75R050M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1191 kB
    Stron:
    18
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    IMBG75R040M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1190 kB
    Stron:
    18
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    CYEL18V5123-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM and SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8- channel serial SRAM. This innovative technology is packaged in a compact, low pin count plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites th
    Producent:
    Infineon
    Rozmiar:
    780 kB
    Stron:
    50