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    IM66D130A

    XENSIV™ IM66D130A high performance digital MEMS microphone: best fit for automotive applications in particular Active Noise Cancellation High-performance digital MEMS microphones qualified according to automotive quality standard AEC-Q103-003. They are suited to all applications inside and outside the car, where the best audio performance in harsh environments and a digital PDM interface is required. They also perfectly support acoustic noise cancellation applications with its flat and stable frequency and
    Producent:
    Infineon
    Rozmiar:
    3495 kB
    Stron:
    21
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    IM66D120A

    XENSIV™ IM66D120A high performance digital MEMS microphone: best fit for automotive applications in particular Active Noise Cancellation High-performance digital MEMS microphones qualified according to automotive quality standard AEC-Q103-003. They are suited to all applications inside and outside the car, where the best audio performance in harsh environments and a digital PDM interface is required. They also perfectly support acoustic noise cancellation applications with its flat and stable frequency and
    Producent:
    Infineon
    Rozmiar:
    3494 kB
    Stron:
    21
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    KP466P

    XENSIV™ - KP466P BMS satellite air pressure sensor to detect thermal runaway events in eVehicles The latest member of the KP46x digital air pressure sensor family is dedicated for the detection of the pressure rise inside the battery pack due a failing battery cell. Highly accurate, highly sensitive and reliable features make the sensor the ideal fit for advanced automotive, but also for industrial and consumer use cases.
    Producent:
    Infineon
    Rozmiar:
    3033 kB
    Stron:
    37
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    IM68A130A

    XENSIV™ IM68A130A high performance analog MEMS microphone - best fit for Active Noise Cancellation (ANC), automotive qualified AEC-Q103-003 Its flat frequency, stable phase response, very low frequency roll off (LFRO) makes it perfect for ANC. High SNR, excellent AOP allows superior speech performance,thus a perfect product for a universal microphone inside an audio system. AEC-Q103-003 quali. contributes to reduce efforts and risks of failures in module and system quali. Enlarged operating temp. range up
    Producent:
    Infineon
    Rozmiar:
    2994 kB
    Stron:
    18
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    KP305

    XENSIV™ - KP305 pressure sensor IC for side crash detection and pedestrian protection The Infineon XENSIV KP305 is a pressure sensor for side crash detection in passenger cars and other collision detection systems. It provides an output proportional to the pressure change inside a crash-sensitive air volume, offering relative pressure as a digital Manchester encoded output signal for autonomous operation without additional logic ICs.
    Producent:
    Infineon
    Rozmiar:
    2360 kB
    Stron:
    43
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    KP300

    XENSIV™ - KP300 pressure sensor IC for side crash detection and pedestrian protection The Infineon XENSIV KP300 is a pressure sensor used for side crash detection in passenger cars. It is assembled in a door module within the car's side door and provides an output proportional to the pressure change inside the sensitive air volume (∆p/p0). The relative pressure is provided as a digital Manchester encoded output signal, enabling autonomous sensor operation without additional logic ICs in the pressure satell
    Producent:
    Infineon
    Rozmiar:
    2324 kB
    Stron:
    38
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    IQE030N06NM5SC

    OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 60 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1625 kB
    Stron:
    13
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    IQE050N08NM5SC

    OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 80 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1603 kB
    Stron:
    13
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    IQE065N10NM5SC

    OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 100 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or i
    Producent:
    Infineon
    Rozmiar:
    1597 kB
    Stron:
    13
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    IQE030N06NM5CGSC

    OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 60 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1567 kB
    Stron:
    13
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    IQE050N08NM5CGSC

    OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 80 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1542 kB
    Stron:
    13
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    IQE065N10NM5CGSC

    OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 100 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or i
    Producent:
    Infineon
    Rozmiar:
    1540 kB
    Stron:
    13
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    IQE022N06LM5SC

    OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down DSC package IQE022N06LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density
    Producent:
    Infineon
    Rozmiar:
    1397 kB
    Stron:
    11
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    IQE046N08LM5SC

    OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down DSC package IQE046N08LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density
    Producent:
    Infineon
    Rozmiar:
    1380 kB
    Stron:
    11
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    IQE008N03LM5SC

    HSC 8:1 500 W module solution for data center 48 V application. The IQE008N03LM5SC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside the components. It offers increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than the overmolded package, and is available in Standard and Center-Gate footprints.
    Producent:
    Infineon
    Rozmiar:
    1370 kB
    Stron:
    11
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    IQE022N06LM5CGSC

    OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package IQE022N06LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in a PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages,
    Producent:
    Infineon
    Rozmiar:
    1318 kB
    Stron:
    11
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    IQE008N03LM5CGSC

    2.7 kW 80 plus titanium server power supply The IQE008N03LM5CGSC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside the components. It offers increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than the overmolded package, and is available in Standard and Center-Gate footprints.
    Producent:
    Infineon
    Rozmiar:
    1281 kB
    Stron:
    11
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    IQE022N06LM5CG

    OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package IQE022N06LM5CG is Infineon’s new best-in-class OptiMOS™ 5 Power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability
    Producent:
    Infineon
    Rozmiar:
    1154 kB
    Stron:
    11
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    IQE046N08LM5CG

    OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package IQE046N08LM5CG is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET logic level in a PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, h
    Producent:
    Infineon
    Rozmiar:
    1138 kB
    Stron:
    11
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    IQE046N08LM5CGSC

    OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package IQE046N08LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, s
    Producent:
    Infineon
    Rozmiar:
    1133 kB
    Stron:
    15
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    IQE022N06LM5

    OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package IQE022N06LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. C
    Producent:
    Infineon
    Rozmiar:
    1119 kB
    Stron:
    11
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    IQE046N08LM5

    OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down package IQE046N08LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. C
    Producent:
    Infineon
    Rozmiar:
    1101 kB
    Stron:
    11
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    IQE220N15NM5CG

    OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package The IQE220N15NM5CG is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. It offers increased thermal capability and improved power density and layout possibilities. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).
    Producent:
    Infineon
    Rozmiar:
    1097 kB
    Stron:
    11
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    IQE220N15NM5

    OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package The IQE220N15NM5 is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. It offers increased thermal capability and improved power density and layout possibilities. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).
    Producent:
    Infineon
    Rozmiar:
    1064 kB
    Stron:
    11
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    IM63D135A

    XENSIV™ IM63D135A- Robust digital MEMS microphone for high sound pressure levels High-performance digital MEMS microphones qualified according to automotive quality standard AEC-Q103-003. They are suited to all applications outside and inside the car, where the best audio performance in harsh environments and a digital PDM interface is required. Robust for very high sound pressure levels. Best suited for external sound detection and active/road noise cancellation.
    Producent:
    Infineon
    Rozmiar:
    934 kB
    Stron:
    21